Observation of trapping defects in 4H -silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination

David J. Meyer, Patrick M. Lenahan, Aivars J. Lelis

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

We utilize a highly sensitive electron spin resonance technique called spin-dependent recombination to observe deep level dangling bond centers at and very near the SiC SiO2 interface in fully processed n -channel 4H-SiC lateral metal-oxide-semiconductor field-effect transistors. The axially symmetric g tensor of the largest signal strongly suggests that the responsible defect is a dangling bond center with the dangling bond orbital pointing along the crystalline c axis.

Original languageEnglish (US)
Article number023503
Pages (from-to)023503-1-023503-3
JournalApplied Physics Letters
Volume86
Issue number2
DOIs
StatePublished - Jan 10 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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