Observation of type-I excitons and related confinement effects in type-II superlattices

F. C. Zhang; H. Luo; N. Dai; N. Samarth; M. Dobrowolska; J. K. Furdyna

doi:10.1103/PhysRevB.47.3806

Observation of type-I excitons and related confinement effects in type-II superlattices

F. C. Zhang, H. Luo, N. Dai, N. Samarth, M. Dobrowolska, J. K. Furdyna

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Abstract

CdSe/Zn1-xMnxTe superlattices are characterized by type-II band alignment. We have used these structures to demonstrate that type-II superlattices can exhibit type-I excitons, i.e., excitons which are confined in the same semiconductor layer (either in CdSe or in Zn1-xMnxTe in the present example). Such spatially direct excitons form in a type-II structure when one of the carriers (electron or hole) originates from a well, while the other (hole or electron) originates from a state localized in the barrier, which is typical for subbands at above-barrier energies.

Original language	English (US)
Pages (from-to)	3806-3810
Number of pages	5
Journal	Physical Review B
Volume	47
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.47.3806
State	Published - 1993

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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abstract = "CdSe/Zn1-xMnxTe superlattices are characterized by type-II band alignment. We have used these structures to demonstrate that type-II superlattices can exhibit type-I excitons, i.e., excitons which are confined in the same semiconductor layer (either in CdSe or in Zn1-xMnxTe in the present example). Such spatially direct excitons form in a type-II structure when one of the carriers (electron or hole) originates from a well, while the other (hole or electron) originates from a state localized in the barrier, which is typical for subbands at above-barrier energies.",

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AU - Zhang, F. C.

AU - Luo, H.

AU - Dai, N.

AU - Samarth, N.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

PY - 1993

Y1 - 1993

N2 - CdSe/Zn1-xMnxTe superlattices are characterized by type-II band alignment. We have used these structures to demonstrate that type-II superlattices can exhibit type-I excitons, i.e., excitons which are confined in the same semiconductor layer (either in CdSe or in Zn1-xMnxTe in the present example). Such spatially direct excitons form in a type-II structure when one of the carriers (electron or hole) originates from a well, while the other (hole or electron) originates from a state localized in the barrier, which is typical for subbands at above-barrier energies.

AB - CdSe/Zn1-xMnxTe superlattices are characterized by type-II band alignment. We have used these structures to demonstrate that type-II superlattices can exhibit type-I excitons, i.e., excitons which are confined in the same semiconductor layer (either in CdSe or in Zn1-xMnxTe in the present example). Such spatially direct excitons form in a type-II structure when one of the carriers (electron or hole) originates from a well, while the other (hole or electron) originates from a state localized in the barrier, which is typical for subbands at above-barrier energies.

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Observation of type-I excitons and related confinement effects in type-II superlattices

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