Abstract
CdSe/Zn1-xMnxTe superlattices are characterized by type-II band alignment. We have used these structures to demonstrate that type-II superlattices can exhibit type-I excitons, i.e., excitons which are confined in the same semiconductor layer (either in CdSe or in Zn1-xMnxTe in the present example). Such spatially direct excitons form in a type-II structure when one of the carriers (electron or hole) originates from a well, while the other (hole or electron) originates from a state localized in the barrier, which is typical for subbands at above-barrier energies.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3806-3810 |
| Number of pages | 5 |
| Journal | Physical Review B |
| Volume | 47 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jan 1 1993 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Observation of type-I excitons and related confinement effects in type-II superlattices. / Zhang, F. C.; Luo, H.; Dai, N.; Samarth, Nitin; Dobrowolska, M.; Furdyna, J. K.
In: Physical Review B, Vol. 47, No. 7, 01.01.1993, p. 3806-3810.Research output: Contribution to journal › Article
TY - JOUR
T1 - Observation of type-I excitons and related confinement effects in type-II superlattices
AU - Zhang, F. C.
AU - Luo, H.
AU - Dai, N.
AU - Samarth, Nitin
AU - Dobrowolska, M.
AU - Furdyna, J. K.
PY - 1993/1/1
Y1 - 1993/1/1
N2 - CdSe/Zn1-xMnxTe superlattices are characterized by type-II band alignment. We have used these structures to demonstrate that type-II superlattices can exhibit type-I excitons, i.e., excitons which are confined in the same semiconductor layer (either in CdSe or in Zn1-xMnxTe in the present example). Such spatially direct excitons form in a type-II structure when one of the carriers (electron or hole) originates from a well, while the other (hole or electron) originates from a state localized in the barrier, which is typical for subbands at above-barrier energies.
AB - CdSe/Zn1-xMnxTe superlattices are characterized by type-II band alignment. We have used these structures to demonstrate that type-II superlattices can exhibit type-I excitons, i.e., excitons which are confined in the same semiconductor layer (either in CdSe or in Zn1-xMnxTe in the present example). Such spatially direct excitons form in a type-II structure when one of the carriers (electron or hole) originates from a well, while the other (hole or electron) originates from a state localized in the barrier, which is typical for subbands at above-barrier energies.
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U2 - 10.1103/PhysRevB.47.3806
DO - 10.1103/PhysRevB.47.3806
M3 - Article
AN - SCOPUS:0000493066
VL - 47
SP - 3806
EP - 3810
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 2469-9950
IS - 7
ER -