Observations of NBTI-induced atomic scale defects

J. P. Campbell, P. M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We utilize a combination of MOSFET gate-controlled diode DC-IV measurements and a very sensitive electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated by NBTI in fully processed SiO2 -based pMOSFETs. In SiO2 devices, the defects include two Si/SiO2 interface silicon dangling bond centers (Pb0 and Pb1) and may also include an oxide silicon dangling bond center (E′). Our observations suggest that both P b0 and Pb1 defects play major roles while the E′ defect plays a somewhat different role in the SiO2 devices.

Original languageEnglish (US)
Title of host publication2005 IEEE International Integrated Reliability Workshop Final Report, IIRW 2005
Pages1-4
Number of pages4
DOIs
StatePublished - Dec 1 2005
Event2005 IEEE International Integrated Reliability Workshop, IIRW 2005 - S. Lake Tahoe, CA, United States
Duration: Oct 17 2005Oct 20 2005

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2005

Other

Other2005 IEEE International Integrated Reliability Workshop, IIRW 2005
CountryUnited States
CityS. Lake Tahoe, CA
Period10/17/0510/20/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Campbell, J. P., Lenahan, P. M., Krishnan, A. T., & Krishnan, S. (2005). Observations of NBTI-induced atomic scale defects. In 2005 IEEE International Integrated Reliability Workshop Final Report, IIRW 2005 (pp. 1-4). [1609551] (IEEE International Integrated Reliability Workshop Final Report; Vol. 2005). https://doi.org/10.1109/IRWS.2005.1609551