Observations of NBTI-induced atomic scale defects

J. P. Campbell, P. M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We utilize a combination of MOSFET gate-controlled diode DC-IV measurements and a very sensitive electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated by NBTI in fully processed SiO2 -based pMOSFETs. In SiO2 devices, the defects include two Si/SiO2 interface silicon dangling bond centers (Pb0 and Pb1) and may also include an oxide silicon dangling bond center (E′). Our observations suggest that both P b0 and Pb1 defects play major roles while the E′ defect plays a somewhat different role in the SiO2 devices.

Original languageEnglish (US)
Title of host publication2005 IEEE International Integrated Reliability Workshop Final Report, IIRW 2005
Pages1-4
Number of pages4
DOIs
StatePublished - 2005
Event2005 IEEE International Integrated Reliability Workshop, IIRW 2005 - S. Lake Tahoe, CA, United States
Duration: Oct 17 2005Oct 20 2005

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2005

Other

Other2005 IEEE International Integrated Reliability Workshop, IIRW 2005
Country/TerritoryUnited States
CityS. Lake Tahoe, CA
Period10/17/0510/20/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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