Observations of NBTI-induced atomic-scale defects

Jason P. Campbell, Patrick M. Lenahan, Anand T. Krishnan, Srikanth Krishnan

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO 2-based pMOSFETs. In SiO 2 devices, the defects include two Si/SiO 2 interface silicon dangling bond centers (P b0 and P b1) and may also include an oxide silicon dangling bond center (E′). The observations indicate that both P b0 and P b1 defects play major roles in these SiO 2-based devices and suggest that E′ centers could play an important role.

Original languageEnglish (US)
Article number1673698
Pages (from-to)117-122
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Volume6
Issue number2
DOIs
StatePublished - Jun 1 2006

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this