Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

Yue Wei Yin, Wei Chuan Huang, Yu Kuai Liu, Sheng Wei Yang, Si Ning Dong, Jing Tao, Yi Mei Zhu, Qi Li, Xiao Guang Li

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. Combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

Original languageEnglish (US)
Article number1500183
JournalAdvanced Electronic Materials
Volume1
Issue number11
DOIs
StatePublished - Jan 1 2015

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Tunnel junctions
Nonvolatile storage
Tunnelling magnetoresistance
Data storage equipment
Ferroelectricity
Magnetoelectronics
Ferroelectric materials
Magnetization
Electric power utilization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Yin, Y. W., Huang, W. C., Liu, Y. K., Yang, S. W., Dong, S. N., Tao, J., ... Li, X. G. (2015). Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions. Advanced Electronic Materials, 1(11), [1500183]. https://doi.org/10.1002/aelm.201500183
Yin, Yue Wei ; Huang, Wei Chuan ; Liu, Yu Kuai ; Yang, Sheng Wei ; Dong, Si Ning ; Tao, Jing ; Zhu, Yi Mei ; Li, Qi ; Li, Xiao Guang. / Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions. In: Advanced Electronic Materials. 2015 ; Vol. 1, No. 11.
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Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions. / Yin, Yue Wei; Huang, Wei Chuan; Liu, Yu Kuai; Yang, Sheng Wei; Dong, Si Ning; Tao, Jing; Zhu, Yi Mei; Li, Qi; Li, Xiao Guang.

In: Advanced Electronic Materials, Vol. 1, No. 11, 1500183, 01.01.2015.

Research output: Contribution to journalArticle

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AU - Tao, Jing

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AU - Li, Qi

AU - Li, Xiao Guang

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N2 - General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. Combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

AB - General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. Combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

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