Offset Drain ZnO Thin-Film Transistors for High-Voltage Operation

Yiyang Gong, Thomas N. Jackson

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

High-voltage thin-film transistors (TFTs) are useful building blocks for thin-film circuits. In this letter, we demonstrate ZnO high-voltage TFTs with offset drain. For these devices, the drain-to-source breakdown voltage increases from about 30 to >80 V as the drain offset length is increased from 0 to ∼ 2 μm, with little degradation in the I-V characteristics. The fabrication process is simple and uses a maximum temperature of 200 °C, which allows the high-voltage ZnO TFTs to be readily integrated in thin-film circuits on either glass or polymeric substrates.

Original languageEnglish (US)
Article number7964749
Pages (from-to)1047-1050
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number8
DOIs
StatePublished - Aug 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Offset Drain ZnO Thin-Film Transistors for High-Voltage Operation'. Together they form a unique fingerprint.

  • Cite this