Ohmic contacts to Al-rich n-AlGaN

E. D. Readinger, S. E. Mohney, T. G. Pribicko, J. H. Wang, K. O. Schweitz, U. Chowdhury, M. M. Wong, R. D. Dupuis, M. Pophristic, S. P. Guo

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Abstract

Ti/Al/Pt/Au and V/Al/Pt/Au ohmic contacts were studied on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N. Optimised V/Al/Pt/Au contacts provided lower resistance than did Ti/Al/Pt/Au contacts, which are commonly used on less Al-rich n-AlGaN. Specific contact resistances of 1 × 10-5 Ω · cm2 and 4 × 10-5 were achieved on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N, respectively.

Original languageEnglish (US)
Pages (from-to)1230-1231
Number of pages2
JournalElectronics Letters
Volume38
Issue number20
DOIs
StatePublished - Sep 26 2002

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Readinger, E. D., Mohney, S. E., Pribicko, T. G., Wang, J. H., Schweitz, K. O., Chowdhury, U., Wong, M. M., Dupuis, R. D., Pophristic, M., & Guo, S. P. (2002). Ohmic contacts to Al-rich n-AlGaN. Electronics Letters, 38(20), 1230-1231. https://doi.org/10.1049/el:20020800