Ohmic contacts to n-type AlGaN and nitride HEMT epilayers

P. K. Wang, K. O. Schweitz, T. G. Pribicko, S. E. Mohney, M. Pophristic, D. Gotthold

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The authors examine the influence of a variety of processing variables on the specific contact resistance of Ti/Al/Pt/Au ohmic contacts to n-type AlGaN, and we study the effect of replacing Ti with V when fabricating ohmic contacts to n-type AlGaN/GaN HEMT epilayers. The replacement of Ti with V allows the annealing temperature for formation of low resistance ohmic contacts to be decreased by 150°C.

Original languageEnglish (US)
Title of host publication2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages199-200
Number of pages2
ISBN (Electronic)0780374320, 9780780374324
DOIs
StatePublished - 2001
EventInternational Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States
Duration: Dec 5 2001Dec 7 2001

Publication series

Name2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2001
CountryUnited States
CityWashington
Period12/5/0112/7/01

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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