Ohmic contacts to n-type silicon-germanium

S. F. Nelson, Thomas Nelson Jackson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.

Original languageEnglish (US)
Pages (from-to)3563-3565
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number23
DOIs
StatePublished - Dec 2 1996

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antimony
electric contacts
germanium
silver alloys
silicon
ions
gold
electrical resistivity
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Nelson, S. F. ; Jackson, Thomas Nelson. / Ohmic contacts to n-type silicon-germanium. In: Applied Physics Letters. 1996 ; Vol. 69, No. 23. pp. 3563-3565.
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Ohmic contacts to n-type silicon-germanium. / Nelson, S. F.; Jackson, Thomas Nelson.

In: Applied Physics Letters, Vol. 69, No. 23, 02.12.1996, p. 3563-3565.

Research output: Contribution to journalArticle

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