We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600°C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.
|Original language||English (US)|
|Number of pages||1|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1995|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)