Ohmic contacts to p-type Al 0.45Ga 0.55N

B. A. Hull, Suzanne E. Mohney, U. Chowdhury, R. D. Dupuis

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Ni, Pd, and Au Ohmic contacts to p-Al 0.45Ga 0.55N have been examined. We have observed that annealing the contacts in excess of 800°C is required to minimize the contact resistivity. However, the Pd and Au contacts annealed in excess of 700°C, which showed much better transport properties than Ni contacts annealed at the same temperatures, suffered from a rapid photoinduced degradation of both the current-voltage characteristics of the contacts and of the sheet resistance of the p-Al 0.45Ga 0.55N itself. This degradation was greatly reduced by passivating the p-Al 0.45Ga 0.55N surface with a SiN x film. A hypothesis is presented to describe the observed degradation.

Original languageEnglish (US)
Article number7
Pages (from-to)7325-7331
Number of pages7
JournalJournal of Applied Physics
Volume96
Issue number12
DOIs
StatePublished - Dec 15 2004

Fingerprint

electric contacts
degradation
transport properties
electrical resistivity
annealing
electric potential
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Hull, B. A., Mohney, S. E., Chowdhury, U., & Dupuis, R. D. (2004). Ohmic contacts to p-type Al 0.45Ga 0.55N. Journal of Applied Physics, 96(12), 7325-7331. [7]. https://doi.org/10.1063/1.1814169
Hull, B. A. ; Mohney, Suzanne E. ; Chowdhury, U. ; Dupuis, R. D. / Ohmic contacts to p-type Al 0.45Ga 0.55N. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 12. pp. 7325-7331.
@article{ce3046ca9ac3428fae398cbfe6a9065e,
title = "Ohmic contacts to p-type Al 0.45Ga 0.55N",
abstract = "Ni, Pd, and Au Ohmic contacts to p-Al 0.45Ga 0.55N have been examined. We have observed that annealing the contacts in excess of 800°C is required to minimize the contact resistivity. However, the Pd and Au contacts annealed in excess of 700°C, which showed much better transport properties than Ni contacts annealed at the same temperatures, suffered from a rapid photoinduced degradation of both the current-voltage characteristics of the contacts and of the sheet resistance of the p-Al 0.45Ga 0.55N itself. This degradation was greatly reduced by passivating the p-Al 0.45Ga 0.55N surface with a SiN x film. A hypothesis is presented to describe the observed degradation.",
author = "Hull, {B. A.} and Mohney, {Suzanne E.} and U. Chowdhury and Dupuis, {R. D.}",
year = "2004",
month = "12",
day = "15",
doi = "10.1063/1.1814169",
language = "English (US)",
volume = "96",
pages = "7325--7331",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Hull, BA, Mohney, SE, Chowdhury, U & Dupuis, RD 2004, 'Ohmic contacts to p-type Al 0.45Ga 0.55N', Journal of Applied Physics, vol. 96, no. 12, 7, pp. 7325-7331. https://doi.org/10.1063/1.1814169

Ohmic contacts to p-type Al 0.45Ga 0.55N. / Hull, B. A.; Mohney, Suzanne E.; Chowdhury, U.; Dupuis, R. D.

In: Journal of Applied Physics, Vol. 96, No. 12, 7, 15.12.2004, p. 7325-7331.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ohmic contacts to p-type Al 0.45Ga 0.55N

AU - Hull, B. A.

AU - Mohney, Suzanne E.

AU - Chowdhury, U.

AU - Dupuis, R. D.

PY - 2004/12/15

Y1 - 2004/12/15

N2 - Ni, Pd, and Au Ohmic contacts to p-Al 0.45Ga 0.55N have been examined. We have observed that annealing the contacts in excess of 800°C is required to minimize the contact resistivity. However, the Pd and Au contacts annealed in excess of 700°C, which showed much better transport properties than Ni contacts annealed at the same temperatures, suffered from a rapid photoinduced degradation of both the current-voltage characteristics of the contacts and of the sheet resistance of the p-Al 0.45Ga 0.55N itself. This degradation was greatly reduced by passivating the p-Al 0.45Ga 0.55N surface with a SiN x film. A hypothesis is presented to describe the observed degradation.

AB - Ni, Pd, and Au Ohmic contacts to p-Al 0.45Ga 0.55N have been examined. We have observed that annealing the contacts in excess of 800°C is required to minimize the contact resistivity. However, the Pd and Au contacts annealed in excess of 700°C, which showed much better transport properties than Ni contacts annealed at the same temperatures, suffered from a rapid photoinduced degradation of both the current-voltage characteristics of the contacts and of the sheet resistance of the p-Al 0.45Ga 0.55N itself. This degradation was greatly reduced by passivating the p-Al 0.45Ga 0.55N surface with a SiN x film. A hypothesis is presented to describe the observed degradation.

UR - http://www.scopus.com/inward/record.url?scp=11044225148&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11044225148&partnerID=8YFLogxK

U2 - 10.1063/1.1814169

DO - 10.1063/1.1814169

M3 - Article

VL - 96

SP - 7325

EP - 7331

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 7

ER -