Ohmic contacts to p-type Al 0.45Ga 0.55N

B. A. Hull, S. E. Mohney, U. Chowdhury, R. D. Dupuis

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12 Scopus citations

Abstract

Ni, Pd, and Au Ohmic contacts to p-Al 0.45Ga 0.55N have been examined. We have observed that annealing the contacts in excess of 800°C is required to minimize the contact resistivity. However, the Pd and Au contacts annealed in excess of 700°C, which showed much better transport properties than Ni contacts annealed at the same temperatures, suffered from a rapid photoinduced degradation of both the current-voltage characteristics of the contacts and of the sheet resistance of the p-Al 0.45Ga 0.55N itself. This degradation was greatly reduced by passivating the p-Al 0.45Ga 0.55N surface with a SiN x film. A hypothesis is presented to describe the observed degradation.

Original languageEnglish (US)
Article number7
Pages (from-to)7325-7331
Number of pages7
JournalJournal of Applied Physics
Volume96
Issue number12
DOIs
StatePublished - Dec 15 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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