Ohmic contacts to p-type III-V semiconductors for the base of heterojunction bipolar transistors

Suzanne E. Mohney, S. H. Wang, E. M. Lysczek, Joshua Alexander Robinson

Research output: Contribution to journalConference article

Abstract

Ohmic contacts to p-type In0.25Ga0.75Sb, InAs, and InAs0.8P0.2 have been investigated for the base of heterojunction bipolar transistors. On all these semiconductors, using Pd and/or Pt as the first layer in the metallization stack provided the lowest contact resistances. Specific contact resistances as low as 3 × 10-7 Ω-cm2 were measured for Au/W/Pd/p-InGaSb. Thin reactive layers of Pd or Pt were used beneath an unreactive W barrier to keep the contacts shallow, but contact resistance and thermal stability were sacrificed when 2 nm of Pd was used instead of 5 nm. The lowest contact resistance we measured on p-InAs was obtained with Pd/Pt/Au, but Pd/W/Au exhibited better thermal stability at 250°C. For p-type InAsP, Pd/Ru/Au provided a specific contact resistance of 4 × 10-6 Ω-cm2 as deposited. The contact consumed only 4 ± 2 nm of InAsP after 3 days at 250°C, and its resistance remained low. copyright The Electrochemical Society.

Original languageEnglish (US)
Pages (from-to)47-56
Number of pages10
JournalECS Transactions
Volume3
Issue number5
DOIs
StatePublished - Dec 1 2006
EventState-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

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Ohmic contacts
Heterojunction bipolar transistors
Contact resistance
Thermodynamic stability
Metallizing
III-V semiconductors
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "Ohmic contacts to p-type In0.25Ga0.75Sb, InAs, and InAs0.8P0.2 have been investigated for the base of heterojunction bipolar transistors. On all these semiconductors, using Pd and/or Pt as the first layer in the metallization stack provided the lowest contact resistances. Specific contact resistances as low as 3 × 10-7 Ω-cm2 were measured for Au/W/Pd/p-InGaSb. Thin reactive layers of Pd or Pt were used beneath an unreactive W barrier to keep the contacts shallow, but contact resistance and thermal stability were sacrificed when 2 nm of Pd was used instead of 5 nm. The lowest contact resistance we measured on p-InAs was obtained with Pd/Pt/Au, but Pd/W/Au exhibited better thermal stability at 250°C. For p-type InAsP, Pd/Ru/Au provided a specific contact resistance of 4 × 10-6 Ω-cm2 as deposited. The contact consumed only 4 ± 2 nm of InAsP after 3 days at 250°C, and its resistance remained low. copyright The Electrochemical Society.",
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Ohmic contacts to p-type III-V semiconductors for the base of heterojunction bipolar transistors. / Mohney, Suzanne E.; Wang, S. H.; Lysczek, E. M.; Robinson, Joshua Alexander.

In: ECS Transactions, Vol. 3, No. 5, 01.12.2006, p. 47-56.

Research output: Contribution to journalConference article

TY - JOUR

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AU - Mohney, Suzanne E.

AU - Wang, S. H.

AU - Lysczek, E. M.

AU - Robinson, Joshua Alexander

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Ohmic contacts to p-type In0.25Ga0.75Sb, InAs, and InAs0.8P0.2 have been investigated for the base of heterojunction bipolar transistors. On all these semiconductors, using Pd and/or Pt as the first layer in the metallization stack provided the lowest contact resistances. Specific contact resistances as low as 3 × 10-7 Ω-cm2 were measured for Au/W/Pd/p-InGaSb. Thin reactive layers of Pd or Pt were used beneath an unreactive W barrier to keep the contacts shallow, but contact resistance and thermal stability were sacrificed when 2 nm of Pd was used instead of 5 nm. The lowest contact resistance we measured on p-InAs was obtained with Pd/Pt/Au, but Pd/W/Au exhibited better thermal stability at 250°C. For p-type InAsP, Pd/Ru/Au provided a specific contact resistance of 4 × 10-6 Ω-cm2 as deposited. The contact consumed only 4 ± 2 nm of InAsP after 3 days at 250°C, and its resistance remained low. copyright The Electrochemical Society.

AB - Ohmic contacts to p-type In0.25Ga0.75Sb, InAs, and InAs0.8P0.2 have been investigated for the base of heterojunction bipolar transistors. On all these semiconductors, using Pd and/or Pt as the first layer in the metallization stack provided the lowest contact resistances. Specific contact resistances as low as 3 × 10-7 Ω-cm2 were measured for Au/W/Pd/p-InGaSb. Thin reactive layers of Pd or Pt were used beneath an unreactive W barrier to keep the contacts shallow, but contact resistance and thermal stability were sacrificed when 2 nm of Pd was used instead of 5 nm. The lowest contact resistance we measured on p-InAs was obtained with Pd/Pt/Au, but Pd/W/Au exhibited better thermal stability at 250°C. For p-type InAsP, Pd/Ru/Au provided a specific contact resistance of 4 × 10-6 Ω-cm2 as deposited. The contact consumed only 4 ± 2 nm of InAsP after 3 days at 250°C, and its resistance remained low. copyright The Electrochemical Society.

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