Ohmic contacts to plasma etched n-Al 0.58Ga 0.42N

M. A. Miller, S. E. Mohney, A. Nikiforov, G. S. Cargill, K. H.A. Bogart

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Plasma etching is required to expose n-Al xGa 1-xN layers for bottom-emitting ultraviolet light emitting diodes grown on sapphire. However, etching can increase the difficulty of forming Ohmic contacts. X-ray photoelectron spectroscopy and cathodoluminescence reveal how the semiconductor changes with etching and help explain why it becomes more difficult to form an Ohmic contact. A V/Al/V/Au metallization has been investigated for Ohmic contacts to n-Al 0.58Ga 0.42N etched with a BCl 3/Cl 2/Ar chemistry. Increased V thickness and higher annealing temperatures were required to obtain a specific contact resistance of 4.7 × 10 -4 Ω cm 2 for etched n-Al 0.58Ga 0.42N compared to optimized contacts on unetched films.

Original languageEnglish (US)
Article number132114
JournalApplied Physics Letters
Volume89
Issue number13
DOIs
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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