On Resolving the Anomaly of Indium-tin Oxide Silicon Junctions

S. Ashok, S. J. Fonash, R. Singh, P. Wiley

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

Experimental evidence is presented to resolve the anomalous rectifying behavior of indium-tin oxide (ITO)/silicon junctions. Previous work has demonstrated that the rectifying direction for this hetero junction depends on the method used to deposit the ITO. It is shown here that the cause for this is the existence of damaged surface layers in junctions subject to ion beam processing. Irrespective of the material deposited and irrespective of the doping type, ion-beam sputtering tends to cause the silicon band edges to bend downwards at the surface. It is for this reason that ion-beam deposited ITO gives a rectifying junction on p-Si and an ohmic contact on n-Si.

Original languageEnglish (US)
Pages (from-to)184-186
Number of pages3
JournalIEEE Electron Device Letters
Volume2
Issue number7
DOIs
StatePublished - Apr 1981

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'On Resolving the Anomaly of Indium-tin Oxide Silicon Junctions'. Together they form a unique fingerprint.

  • Cite this