The capacitance of metal-insulator-silicon (MIS) capacitors with SrTa2O6, ZrSiO4-based high-permittivity (k) gate dielectric was analyzed. It was found that the accumulation capacitance of MIS structures with high-k gate dielectrics has a strong dependence on the capacitance-voltage measurement temperature and frequency. This was due to the impedance contributions from a low quality interfacial layer between the high-k dielectric and the Si substrate.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry