On the capacitance of metal/high-k dielectric material stack/silicon structures

J. Jiang, Osama O. Awadelkarim, D. O. Lee, P. Roman, Jerzy Ruzyllo

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The capacitance of metal-insulator-silicon (MIS) capacitors with SrTa2O6, ZrSiO4-based high-permittivity (k) gate dielectric was analyzed. It was found that the accumulation capacitance of MIS structures with high-k gate dielectrics has a strong dependence on the capacitance-voltage measurement temperature and frequency. This was due to the impedance contributions from a low quality interfacial layer between the high-k dielectric and the Si substrate.

Original languageEnglish (US)
Pages (from-to)1991-1995
Number of pages5
JournalSolid-State Electronics
Volume46
Issue number11
DOIs
StatePublished - Nov 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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