On the CMP material removal at the molecular scale

L. Chang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Understanding of the mechanisms of material removal is of fundamental importance in chemical-mechanical planarization of semiconductor wafers. A plausible mechanism at work is that the material is removed at the molecular scale by debonding the chemistry-weakened molecules at the wafer surface. A sequence of order-of-magnitude calculations is carried out to substantiate this mechanism of chemical-mechanical polishing (CMP) materials removal. The analysis may lend further credence to the mechanism in addition to its underlying theoretical foundation.

Original languageEnglish (US)
Pages (from-to)436-437
Number of pages2
JournalJournal of Tribology
Volume129
Issue number2
DOIs
StatePublished - Apr 1 2007

Fingerprint

Chemical mechanical polishing
polishing
machining
Debonding
wafers
Semiconductor materials
Molecules
chemistry
molecules

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Chang, L. / On the CMP material removal at the molecular scale. In: Journal of Tribology. 2007 ; Vol. 129, No. 2. pp. 436-437.
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On the CMP material removal at the molecular scale. / Chang, L.

In: Journal of Tribology, Vol. 129, No. 2, 01.04.2007, p. 436-437.

Research output: Contribution to journalArticle

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