On the design of GaN vertical MESFETs on commercial LED sapphire wafers

Mahmoud R.M. Atalla, Asim M. Noor Elahi, Chen Mo, Zhenyu Jiang, Jie Liu, S Ashok, Jian Xu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.

Original languageEnglish (US)
Pages (from-to)23-31
Number of pages9
JournalSolid-State Electronics
Volume126
DOIs
StatePublished - Dec 1 2016

Fingerprint

MESFET devices
Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes
field effect transistors
current regulators
chips
wafers
Leakage currents
illuminating
metals
Carrier concentration
Charge transfer
leakage
cut-off
Lighting
communication
Display devices

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Atalla, M. R. M., Noor Elahi, A. M., Mo, C., Jiang, Z., Liu, J., Ashok, S., & Xu, J. (2016). On the design of GaN vertical MESFETs on commercial LED sapphire wafers. Solid-State Electronics, 126, 23-31. https://doi.org/10.1016/j.sse.2016.09.019
Atalla, Mahmoud R.M. ; Noor Elahi, Asim M. ; Mo, Chen ; Jiang, Zhenyu ; Liu, Jie ; Ashok, S ; Xu, Jian. / On the design of GaN vertical MESFETs on commercial LED sapphire wafers. In: Solid-State Electronics. 2016 ; Vol. 126. pp. 23-31.
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abstract = "Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.",
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Atalla, MRM, Noor Elahi, AM, Mo, C, Jiang, Z, Liu, J, Ashok, S & Xu, J 2016, 'On the design of GaN vertical MESFETs on commercial LED sapphire wafers', Solid-State Electronics, vol. 126, pp. 23-31. https://doi.org/10.1016/j.sse.2016.09.019

On the design of GaN vertical MESFETs on commercial LED sapphire wafers. / Atalla, Mahmoud R.M.; Noor Elahi, Asim M.; Mo, Chen; Jiang, Zhenyu; Liu, Jie; Ashok, S; Xu, Jian.

In: Solid-State Electronics, Vol. 126, 01.12.2016, p. 23-31.

Research output: Contribution to journalArticle

TY - JOUR

T1 - On the design of GaN vertical MESFETs on commercial LED sapphire wafers

AU - Atalla, Mahmoud R.M.

AU - Noor Elahi, Asim M.

AU - Mo, Chen

AU - Jiang, Zhenyu

AU - Liu, Jie

AU - Ashok, S

AU - Xu, Jian

PY - 2016/12/1

Y1 - 2016/12/1

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AB - Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.

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Atalla MRM, Noor Elahi AM, Mo C, Jiang Z, Liu J, Ashok S et al. On the design of GaN vertical MESFETs on commercial LED sapphire wafers. Solid-State Electronics. 2016 Dec 1;126:23-31. https://doi.org/10.1016/j.sse.2016.09.019