On the effect of crystallographic orientation on ductile material removal in silicon

Brian P. O'Connor, Eric R. Marsh, Jeremiah A. Couey

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

In this work the critical chip thickness for ductile regime machining of monocrystalline, electronic-grade silicon is measured as a function of crystallographic orientation on the (0 0 1) cubic face. A single-point diamond flycutting setup allows sub-micrometer, non-overlapping cuts in any direction while minimizing tool track length and sensitivity to workpiece flatness. Cutting tests are performed using chemically faceted, -45° rake angle diamond tools at cutting speeds of 1400 and 5600 mm/s. Inspection of the machined silicon workpiece using optical microscopy allows calculation of the critical chip thickness as a function of crystallographic orientation for different cutting conditions and workpiece orientations. Results show that the critical chip thickness in silicon for ductile material removal reaches a maximum of 120 nm in the [1 0 0] direction and a minimum of 40 nm in the [1 1 0] direction. These results agree with the more qualitative results of many previous efforts.

Original languageEnglish (US)
Pages (from-to)124-132
Number of pages9
JournalPrecision Engineering
Volume29
Issue number1
DOIs
StatePublished - Jan 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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