On the importance of bandgap formation in graphene for analog device applications

Saptarshi Das, Joerg Appenzeller

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We present a study that identifies the ideal bandgap value in graphene devices, e.g., through size quantization in graphene nanoribbons (GNRs), to enable graphene-based high-performance RF applications. When considering a ballistic graphene GNR-LNA, including aspects like stability, gain, power dissipation, and load impedance, our calculations predict a finite bandgap of the order of Eg≈100 meV to be ideally suited. GNR-LNAs with this bandgap, biased at the optimum operating point, are ultrafast (THz) low-noise amplifiers exhibiting performance specs that show considerable advantages over state-of-the-art technologies. The optimum operating point and bandgap range are found by simulating the impact of the bandgap on several device and circuit relevant parameters including transconductance, output resistance, bandwidth, gain, noise figure, and temperature fluctuations. Our findings are believed to be of relevance in particular for graphene-based RF applications.

Original languageEnglish (US)
Article number5703130
Pages (from-to)1093-1098
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume10
Issue number5
DOIs
StatePublished - Sep 1 2011

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Graphene
Energy gap
Nanoribbons
Low noise amplifiers
Noise figure
Transconductance
Ballistics
Energy dissipation
Bandwidth
Networks (circuits)
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

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On the importance of bandgap formation in graphene for analog device applications. / Das, Saptarshi; Appenzeller, Joerg.

In: IEEE Transactions on Nanotechnology, Vol. 10, No. 5, 5703130, 01.09.2011, p. 1093-1098.

Research output: Contribution to journalArticle

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