On the influence of illumination during ion damage defect anneal of silicon

A. Tanabe, S Ashok

Research output: Contribution to journalConference article

Abstract

An exploratory deep level transient spectroscopy (DLTS) study on the possible role of illumination during thermal annealing has been carried out on Si with extended defects generated by Ar implantation and electron cyclotron resonance (ECR) hydrogen plasma. Experiments with rapid thermal anneal (RTA) using quartz-halogen lamps show only a minor role for illumination on anneal of defects generated by Ar ion damage as well as thermal generation of defects under post-hydrogenation anneal. However, significant differences are evident relative to conventional furnace anneal and it appears likely that recombination-assisted defect reactions may be quite significant in Si processing when high intensity sources such as arc lamps are adapted in RTA systems.

Original languageEnglish (US)
Pages (from-to)709-714
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume396
StatePublished - Jan 1 1996

Fingerprint

Silicon
Lighting
illumination
Ions
damage
Defects
defects
silicon
ions
Arc lamps
arc lamps
Quartz
Halogens
Deep level transient spectroscopy
Electron cyclotron resonance
hydrogen plasma
electron cyclotron resonance
Electric lamps
halogens
Hydrogenation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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On the influence of illumination during ion damage defect anneal of silicon. / Tanabe, A.; Ashok, S.

In: Materials Research Society Symposium - Proceedings, Vol. 396, 01.01.1996, p. 709-714.

Research output: Contribution to journalConference article

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AU - Ashok, S

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