Abstract
In most cases, accurate and simple models are required to predict the detrimental effect of the parasitic capacitances in aggressively scaled-down MOSFETs. Correct models for Ctop and Cbottom should be employed since each of these capacitances, if considered independently, will have a different effect on the device performance.
Original language | English (US) |
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Pages (from-to) | 1676-1677 |
Number of pages | 2 |
Journal | IEEE Transactions on Electron Devices |
Volume | 52 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering