In most cases, accurate and simple models are required to predict the detrimental effect of the parasitic capacitances in aggressively scaled-down MOSFETs. Correct models for Ctop and Cbottom should be employed since each of these capacitances, if considered independently, will have a different effect on the device performance.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering