On the potential of correlated materials in the design of spin-based cross-point memories (Invited)

Sumeet Kumar Gupta, Ahmedullah Aziz, Nikhil Shukla, Suman Datta

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Cross-point architectures are promising for designing dense memory arrays. However, sneak current paths in a cross-point array necessitates the use of non-linear selectors. In this paper, we analyze the potential of employing correlated materials exhibiting abrupt insulator-metal transitions as selectors to design cross-point memories based on magnetic tunnel junctions (MTJs). We analyze the properties of the correlated materials and co-design MTJs and the selector to optimize the energy efficiency and robustness of the memory array. Our analysis points to the need of a correlated material with a large ratio of insulator and metal resistivities along with appropriate critical currents for the phase transitions (the values of which depend on the absolute value of the resistivities). We discuss that the design constraints lead to a restriction on the range of the selector length, which is closely related to the oxide thickness of the MTJ. Comparison of the cross-point architecture with standard architecture shows the benefits in the former in terms of 7% larger sense margin and 5X higher integration density at iso-read stability. However, this comes at the cost of 2X lower write speed (due to two-cycle write) and 11%-19% increase in the read/write power (due to sneak current in the cross-point array).

    Original languageEnglish (US)
    Title of host publicationISCAS 2016 - IEEE International Symposium on Circuits and Systems
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1158-1161
    Number of pages4
    ISBN (Electronic)9781479953400
    DOIs
    StatePublished - Jul 29 2016
    Event2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canada
    Duration: May 22 2016May 25 2016

    Publication series

    NameProceedings - IEEE International Symposium on Circuits and Systems
    Volume2016-July
    ISSN (Print)0271-4310

    Other

    Other2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
    CountryCanada
    CityMontreal
    Period5/22/165/25/16

    Fingerprint

    Tunnel junctions
    Data storage equipment
    Metal insulator transition
    Critical currents
    Energy efficiency
    Phase transitions
    Oxides
    Metals

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering

    Cite this

    Gupta, S. K., Aziz, A., Shukla, N., & Datta, S. (2016). On the potential of correlated materials in the design of spin-based cross-point memories (Invited). In ISCAS 2016 - IEEE International Symposium on Circuits and Systems (pp. 1158-1161). [7527451] (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2016.7527451
    Gupta, Sumeet Kumar ; Aziz, Ahmedullah ; Shukla, Nikhil ; Datta, Suman. / On the potential of correlated materials in the design of spin-based cross-point memories (Invited). ISCAS 2016 - IEEE International Symposium on Circuits and Systems. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1158-1161 (Proceedings - IEEE International Symposium on Circuits and Systems).
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    abstract = "Cross-point architectures are promising for designing dense memory arrays. However, sneak current paths in a cross-point array necessitates the use of non-linear selectors. In this paper, we analyze the potential of employing correlated materials exhibiting abrupt insulator-metal transitions as selectors to design cross-point memories based on magnetic tunnel junctions (MTJs). We analyze the properties of the correlated materials and co-design MTJs and the selector to optimize the energy efficiency and robustness of the memory array. Our analysis points to the need of a correlated material with a large ratio of insulator and metal resistivities along with appropriate critical currents for the phase transitions (the values of which depend on the absolute value of the resistivities). We discuss that the design constraints lead to a restriction on the range of the selector length, which is closely related to the oxide thickness of the MTJ. Comparison of the cross-point architecture with standard architecture shows the benefits in the former in terms of 7{\%} larger sense margin and 5X higher integration density at iso-read stability. However, this comes at the cost of 2X lower write speed (due to two-cycle write) and 11{\%}-19{\%} increase in the read/write power (due to sneak current in the cross-point array).",
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    Gupta, SK, Aziz, A, Shukla, N & Datta, S 2016, On the potential of correlated materials in the design of spin-based cross-point memories (Invited). in ISCAS 2016 - IEEE International Symposium on Circuits and Systems., 7527451, Proceedings - IEEE International Symposium on Circuits and Systems, vol. 2016-July, Institute of Electrical and Electronics Engineers Inc., pp. 1158-1161, 2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montreal, Canada, 5/22/16. https://doi.org/10.1109/ISCAS.2016.7527451

    On the potential of correlated materials in the design of spin-based cross-point memories (Invited). / Gupta, Sumeet Kumar; Aziz, Ahmedullah; Shukla, Nikhil; Datta, Suman.

    ISCAS 2016 - IEEE International Symposium on Circuits and Systems. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1158-1161 7527451 (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2016-July).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

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    AB - Cross-point architectures are promising for designing dense memory arrays. However, sneak current paths in a cross-point array necessitates the use of non-linear selectors. In this paper, we analyze the potential of employing correlated materials exhibiting abrupt insulator-metal transitions as selectors to design cross-point memories based on magnetic tunnel junctions (MTJs). We analyze the properties of the correlated materials and co-design MTJs and the selector to optimize the energy efficiency and robustness of the memory array. Our analysis points to the need of a correlated material with a large ratio of insulator and metal resistivities along with appropriate critical currents for the phase transitions (the values of which depend on the absolute value of the resistivities). We discuss that the design constraints lead to a restriction on the range of the selector length, which is closely related to the oxide thickness of the MTJ. Comparison of the cross-point architecture with standard architecture shows the benefits in the former in terms of 7% larger sense margin and 5X higher integration density at iso-read stability. However, this comes at the cost of 2X lower write speed (due to two-cycle write) and 11%-19% increase in the read/write power (due to sneak current in the cross-point array).

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    Gupta SK, Aziz A, Shukla N, Datta S. On the potential of correlated materials in the design of spin-based cross-point memories (Invited). In ISCAS 2016 - IEEE International Symposium on Circuits and Systems. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1158-1161. 7527451. (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2016.7527451