Helium and nitrogen were substituted for hydrogen as a carrier gas in the thermally activated organometallic vapor phase epitaxy of cadmium telluride. The deposition rate decreased markedly and the decrease depended on the particular gas (helium or nitrogen), tellurium precursor (diethyltellurium or diisopropyltellurium), and crystal orientation of the cadmium telluride substrate. Deposition ceased entirely when helium or nitrogen was substituted for hydrogen, the alkyl was diethyltellurium, and the crystal orientation was (111) cd.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry