On the scaling behavior of organic ferroelectric copolymer PVDF-TrFE for memory application

Saptarshi Das, Joerg Appenzeller

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report an interesting scaling trend in the switching time and the switching voltage of the organic ferroelectric copolymer PVDF-TrFE as a function of the device area. We have found that shrinking the lateral dimensions of the ferroelectric film results in a dramatic decrease in the switching time and the switching voltage. The phenomenological theory, that explains this abnormal scaling trend, involves in-plane interaction of the polymeric chains of the two-dimensional Langmuir-Blodgett (LB) films of the copolymer PVDF-TrFE interchain and intrachain coupling results in a weak power-law dependence of the switching field on the device area (ESWαACH 0.1) which is ultimately responsible for the decrease in the switching time and switching voltage. For this scaling study we have used the organic ferroelectric copolymer as the top gate dielectric of a field-effect transistor structure with poly silicon nanowires as channel material. The gated channel area was varied by more than two orders of magnitude (0.04 -5 μm 2) while the thickness of the ferroelectric copolymer film was kept constant at 100 nm. Our findings are believed to be of importance to both, the fundamental understanding of non-equilibrium processes in correlated condensed matter systems and the technological use of ferroelectric copolymers for non volatile memory applications.

Original languageEnglish (US)
Pages (from-to)3326-3332
Number of pages7
JournalOrganic Electronics
Volume13
Issue number12
DOIs
StatePublished - Jan 1 2012

Fingerprint

Ferroelectric materials
copolymers
Copolymers
scaling
Data storage equipment
Electric potential
electric potential
Ferroelectric films
trends
Langmuir Blodgett films
Gate dielectrics
Silicon
Langmuir-Blodgett films
Field effect transistors
vinylidene fluoride-trifluoroethylene copolymer
Nanowires
nanowires
field effect transistors
silicon
interactions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "We report an interesting scaling trend in the switching time and the switching voltage of the organic ferroelectric copolymer PVDF-TrFE as a function of the device area. We have found that shrinking the lateral dimensions of the ferroelectric film results in a dramatic decrease in the switching time and the switching voltage. The phenomenological theory, that explains this abnormal scaling trend, involves in-plane interaction of the polymeric chains of the two-dimensional Langmuir-Blodgett (LB) films of the copolymer PVDF-TrFE interchain and intrachain coupling results in a weak power-law dependence of the switching field on the device area (ESWαACH 0.1) which is ultimately responsible for the decrease in the switching time and switching voltage. For this scaling study we have used the organic ferroelectric copolymer as the top gate dielectric of a field-effect transistor structure with poly silicon nanowires as channel material. The gated channel area was varied by more than two orders of magnitude (0.04 -5 μm 2) while the thickness of the ferroelectric copolymer film was kept constant at 100 nm. Our findings are believed to be of importance to both, the fundamental understanding of non-equilibrium processes in correlated condensed matter systems and the technological use of ferroelectric copolymers for non volatile memory applications.",
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On the scaling behavior of organic ferroelectric copolymer PVDF-TrFE for memory application. / Das, Saptarshi; Appenzeller, Joerg.

In: Organic Electronics, Vol. 13, No. 12, 01.01.2012, p. 3326-3332.

Research output: Contribution to journalArticle

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