On the Ubiquity of Ion Bombardment Modification of Silicon Schottky Barriers

S Ashok, K. Giewont, H. P. Vyas

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish (US)
Pages (from-to)K99-K104
Journalphysica status solidi (a)
Volume98
Issue number1
DOIs
StatePublished - Jan 1 1986

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Schottky barrier diodes
Silicon
Ion bombardment

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ashok, S ; Giewont, K. ; Vyas, H. P. / On the Ubiquity of Ion Bombardment Modification of Silicon Schottky Barriers. In: physica status solidi (a). 1986 ; Vol. 98, No. 1. pp. K99-K104.
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On the Ubiquity of Ion Bombardment Modification of Silicon Schottky Barriers. / Ashok, S; Giewont, K.; Vyas, H. P.

In: physica status solidi (a), Vol. 98, No. 1, 01.01.1986, p. K99-K104.

Research output: Contribution to journalArticle

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