One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates

J. L. Gray, P. L. Nichols, R. Hull, J. A. Floro

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Lateral growth of highly elongated SiGe islands in one dimension has been achieved by ex-situ substrate patterning using a focused ion beam (FIB) to create an array of surface grooves in the Si substrate. Growth of Si 0.7Ge0.3 on this template results in preferential formation of strain-relieving islands next to the edges of the grooves under kinetically limited growth conditions. The length of the nanowire-like islands is limited only by the length of the patterned trench. Occasional bridging across the groove is also observed due to non-uniformity of the underlying topography and the strong preference for the formation of four-fold island structures in this system. The success of this method is dependent upon the initial Si buffer layer thickness and on the orientation of the grooves, which must be parallel to the crystallographic 〈110〉 directions. These results demonstrate that important crystallographic as well as kinetic factors must be considered for controlling the lateral growth of nanostructures on patterned substrates.

Original languageEnglish (US)
Article number044308
JournalJournal of Applied Physics
Volume113
Issue number4
DOIs
StatePublished - Jan 28 2013

Fingerprint

grooves
ion beams
relieving
nonuniformity
topography
nanowires
templates
buffers
kinetics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{35720a37c36f4750bcb79959f8fa53a7,
title = "One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates",
abstract = "Lateral growth of highly elongated SiGe islands in one dimension has been achieved by ex-situ substrate patterning using a focused ion beam (FIB) to create an array of surface grooves in the Si substrate. Growth of Si 0.7Ge0.3 on this template results in preferential formation of strain-relieving islands next to the edges of the grooves under kinetically limited growth conditions. The length of the nanowire-like islands is limited only by the length of the patterned trench. Occasional bridging across the groove is also observed due to non-uniformity of the underlying topography and the strong preference for the formation of four-fold island structures in this system. The success of this method is dependent upon the initial Si buffer layer thickness and on the orientation of the grooves, which must be parallel to the crystallographic 〈110〉 directions. These results demonstrate that important crystallographic as well as kinetic factors must be considered for controlling the lateral growth of nanostructures on patterned substrates.",
author = "Gray, {J. L.} and Nichols, {P. L.} and R. Hull and Floro, {J. A.}",
year = "2013",
month = "1",
day = "28",
doi = "10.1063/1.4778708",
language = "English (US)",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates. / Gray, J. L.; Nichols, P. L.; Hull, R.; Floro, J. A.

In: Journal of Applied Physics, Vol. 113, No. 4, 044308, 28.01.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates

AU - Gray, J. L.

AU - Nichols, P. L.

AU - Hull, R.

AU - Floro, J. A.

PY - 2013/1/28

Y1 - 2013/1/28

N2 - Lateral growth of highly elongated SiGe islands in one dimension has been achieved by ex-situ substrate patterning using a focused ion beam (FIB) to create an array of surface grooves in the Si substrate. Growth of Si 0.7Ge0.3 on this template results in preferential formation of strain-relieving islands next to the edges of the grooves under kinetically limited growth conditions. The length of the nanowire-like islands is limited only by the length of the patterned trench. Occasional bridging across the groove is also observed due to non-uniformity of the underlying topography and the strong preference for the formation of four-fold island structures in this system. The success of this method is dependent upon the initial Si buffer layer thickness and on the orientation of the grooves, which must be parallel to the crystallographic 〈110〉 directions. These results demonstrate that important crystallographic as well as kinetic factors must be considered for controlling the lateral growth of nanostructures on patterned substrates.

AB - Lateral growth of highly elongated SiGe islands in one dimension has been achieved by ex-situ substrate patterning using a focused ion beam (FIB) to create an array of surface grooves in the Si substrate. Growth of Si 0.7Ge0.3 on this template results in preferential formation of strain-relieving islands next to the edges of the grooves under kinetically limited growth conditions. The length of the nanowire-like islands is limited only by the length of the patterned trench. Occasional bridging across the groove is also observed due to non-uniformity of the underlying topography and the strong preference for the formation of four-fold island structures in this system. The success of this method is dependent upon the initial Si buffer layer thickness and on the orientation of the grooves, which must be parallel to the crystallographic 〈110〉 directions. These results demonstrate that important crystallographic as well as kinetic factors must be considered for controlling the lateral growth of nanostructures on patterned substrates.

UR - http://www.scopus.com/inward/record.url?scp=84873665663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873665663&partnerID=8YFLogxK

U2 - 10.1063/1.4778708

DO - 10.1063/1.4778708

M3 - Article

AN - SCOPUS:84873665663

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

M1 - 044308

ER -