Optical absorption and dangling bonds in damaged silicon

C. H. Seager, Patrick M. Lenahan

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have examined the optical absorption and spin-resonance signal characteristics of thin layers of silicon damaged by an abrasive process at room temperature. We find an Urbach-like dependence of the subgap absorption and a g=2.0055 isotropic spin-resonance signal characteristic of silicon dangling bonds. Changes in the optical and spin-resonance data caused by thermal anneals in air, or in atomic hydrogen, indicate that direct electronic transitions of the dangling bond defect are not responsible for the observed optical-absorption spectra. The doping level dependence of these spectra is consistent with the hypothesis that electronic transitions arising from disorder-induced band-tail states cause the subgap absorption.

Original languageEnglish (US)
Pages (from-to)2709-2712
Number of pages4
JournalJournal of Applied Physics
Volume58
Issue number7
DOIs
StatePublished - Dec 1 1985

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spin resonance
optical absorption
silicon
optical resonance
abrasives
electronics
optical spectrum
disorders
absorption spectra
causes
air
defects
room temperature
hydrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Optical absorption and dangling bonds in damaged silicon. / Seager, C. H.; Lenahan, Patrick M.

In: Journal of Applied Physics, Vol. 58, No. 7, 01.12.1985, p. 2709-2712.

Research output: Contribution to journalArticle

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