Optical band gap of BiFe O3 grown by molecular-beam epitaxy

J. F. Ihlefeld, N. J. Podraza, Z. K. Liu, R. C. Rai, X. Xu, T. Heeg, Y. B. Chen, J. Li, R. W. Collins, J. L. Musfeldt, X. Q. Pan, J. Schubert, R. Ramesh, D. G. Schlom

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Abstract

BiFe O3 thin films have been deposited on (001) SrTi O3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFe O3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFe O3 films.

Original languageEnglish (US)
Article number142908
JournalApplied Physics Letters
Volume92
Issue number14
DOIs
StatePublished - Apr 21 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Ihlefeld, J. F., Podraza, N. J., Liu, Z. K., Rai, R. C., Xu, X., Heeg, T., Chen, Y. B., Li, J., Collins, R. W., Musfeldt, J. L., Pan, X. Q., Schubert, J., Ramesh, R., & Schlom, D. G. (2008). Optical band gap of BiFe O3 grown by molecular-beam epitaxy. Applied Physics Letters, 92(14), [142908]. https://doi.org/10.1063/1.2901160