Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry

Seung Gu Lim, Thomas N. Jackson, W. C. Mitchel, R. Bertke, J. L. Freeouf

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have developed a far UV spectroscopic ellipsometer system working up to 9 eV, and applied it to the characterization of three 4H-SiC samples with different surface conditions [i.e., as-received and chemical mechanical processing (CMP) processed 4H-SiC bulk substrates and a 4H-SiC epi sample]. Pseudodielectric functions ε1 and ε2 clearly demonstrate the excellent surface sensitivity of the far UV ellipsometry system as it distinguishes the improvements provided by CMP process. Simulation results of ellipsometer data indicate the existence of a damaged subsurface layer in the as-received 4H-SiC bulk substrate. The investigation of sample surfaces using atomic force microscopy confirms the results of ellipsometry measurements.

Original languageEnglish (US)
Pages (from-to)162-164
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number2
DOIs
StatePublished - Jul 9 2001

Fingerprint

ellipsometry
ellipsometers
atomic force microscopy
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lim, Seung Gu ; Jackson, Thomas N. ; Mitchel, W. C. ; Bertke, R. ; Freeouf, J. L. / Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry. In: Applied Physics Letters. 2001 ; Vol. 79, No. 2. pp. 162-164.
@article{855ab94871ee4650b69bc06d020ee5fd,
title = "Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry",
abstract = "We have developed a far UV spectroscopic ellipsometer system working up to 9 eV, and applied it to the characterization of three 4H-SiC samples with different surface conditions [i.e., as-received and chemical mechanical processing (CMP) processed 4H-SiC bulk substrates and a 4H-SiC epi sample]. Pseudodielectric functions ε1 and ε2 clearly demonstrate the excellent surface sensitivity of the far UV ellipsometry system as it distinguishes the improvements provided by CMP process. Simulation results of ellipsometer data indicate the existence of a damaged subsurface layer in the as-received 4H-SiC bulk substrate. The investigation of sample surfaces using atomic force microscopy confirms the results of ellipsometry measurements.",
author = "Lim, {Seung Gu} and Jackson, {Thomas N.} and Mitchel, {W. C.} and R. Bertke and Freeouf, {J. L.}",
year = "2001",
month = "7",
day = "9",
doi = "10.1063/1.1384895",
language = "English (US)",
volume = "79",
pages = "162--164",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry. / Lim, Seung Gu; Jackson, Thomas N.; Mitchel, W. C.; Bertke, R.; Freeouf, J. L.

In: Applied Physics Letters, Vol. 79, No. 2, 09.07.2001, p. 162-164.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry

AU - Lim, Seung Gu

AU - Jackson, Thomas N.

AU - Mitchel, W. C.

AU - Bertke, R.

AU - Freeouf, J. L.

PY - 2001/7/9

Y1 - 2001/7/9

N2 - We have developed a far UV spectroscopic ellipsometer system working up to 9 eV, and applied it to the characterization of three 4H-SiC samples with different surface conditions [i.e., as-received and chemical mechanical processing (CMP) processed 4H-SiC bulk substrates and a 4H-SiC epi sample]. Pseudodielectric functions ε1 and ε2 clearly demonstrate the excellent surface sensitivity of the far UV ellipsometry system as it distinguishes the improvements provided by CMP process. Simulation results of ellipsometer data indicate the existence of a damaged subsurface layer in the as-received 4H-SiC bulk substrate. The investigation of sample surfaces using atomic force microscopy confirms the results of ellipsometry measurements.

AB - We have developed a far UV spectroscopic ellipsometer system working up to 9 eV, and applied it to the characterization of three 4H-SiC samples with different surface conditions [i.e., as-received and chemical mechanical processing (CMP) processed 4H-SiC bulk substrates and a 4H-SiC epi sample]. Pseudodielectric functions ε1 and ε2 clearly demonstrate the excellent surface sensitivity of the far UV ellipsometry system as it distinguishes the improvements provided by CMP process. Simulation results of ellipsometer data indicate the existence of a damaged subsurface layer in the as-received 4H-SiC bulk substrate. The investigation of sample surfaces using atomic force microscopy confirms the results of ellipsometry measurements.

UR - http://www.scopus.com/inward/record.url?scp=0042884118&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042884118&partnerID=8YFLogxK

U2 - 10.1063/1.1384895

DO - 10.1063/1.1384895

M3 - Article

AN - SCOPUS:0042884118

VL - 79

SP - 162

EP - 164

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -