Optical Monitoring for Plasma-Etching Depth Process

Shizhuo Yin, Francis T. Yu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this letter, a novel technique for monitoring the opaque thin-film etching depth during the plasma-etching process is presented. The feature of this technique is that a small Laminar grating is overlaid on the empty region of the wafer along with the etching pattern. By coherent illumination, a reflected intensity distribution from the Laminar grating for different orders of diffraction can be obtained. Since the etching depth and the diffraction distribution are related, by analyzing the intensity profiles due to Laminar depth grating, the etching depth of the specimen can be measured. We have shown that the accuracy of this measurement can be as high as 100 Å.

Original languageEnglish (US)
Pages (from-to)894-896
Number of pages3
JournalIEEE Photonics Technology Letters
Volume4
Issue number8
DOIs
StatePublished - Jan 1 1992

Fingerprint

Plasma etching
plasma etching
Etching
etching
Monitoring
gratings
Diffraction
Diffraction gratings
diffraction
Lighting
illumination
wafers
Thin films
thin films
profiles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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abstract = "In this letter, a novel technique for monitoring the opaque thin-film etching depth during the plasma-etching process is presented. The feature of this technique is that a small Laminar grating is overlaid on the empty region of the wafer along with the etching pattern. By coherent illumination, a reflected intensity distribution from the Laminar grating for different orders of diffraction can be obtained. Since the etching depth and the diffraction distribution are related, by analyzing the intensity profiles due to Laminar depth grating, the etching depth of the specimen can be measured. We have shown that the accuracy of this measurement can be as high as 100 {\AA}.",
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Optical Monitoring for Plasma-Etching Depth Process. / Yin, Shizhuo; Yu, Francis T.

In: IEEE Photonics Technology Letters, Vol. 4, No. 8, 01.01.1992, p. 894-896.

Research output: Contribution to journalArticle

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