TY - JOUR
T1 - Optical properties of (Bi1-xInx)2Se3 thin films
AU - Wang, Y.
AU - Law, S.
N1 - Funding Information:
Y. W. and S. L. acknowledge funding from the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Award No. DE-SC0016380. We acknowledge the helpful discussion with W. Li and A. Janotti at the Department of Materials Science and Engineering, University of Delaware. We acknowledge Z. Wang and R. Opila at the Department of Materials Science and Engineering, University of Delaware, for discussions about composition measurement with X-ray Photoelectron Spectroscopy.
Publisher Copyright:
© 2018.
PY - 2018
Y1 - 2018
N2 - Bi2Se3 is a topological insulator with unique optical properties, including linearlydispersing surface states. Many of the proposed device applications for Bi2Se3 require a lattice-matched trivially-insulating component. It is known that (Bi1-xInx)2Se3 is a trivial band insulator for moderate indium concentrations. In this paper, we grow and characterize the optical properties of (Bi1-xInx)2Se3 films with varying indium concentrations. We find that the lattice constant and optical bandgap for (Bi1-xInx)2Se3 varies linearly with concentration. We perform infrared reflection measurements as a function of polarization and angle, enabling us to model the permittivity for these materials. Again, we find that most parameters vary linearly with concentration. Our results for the pure end members are consistent with the literature values. This is the first report of optical values for the intermediate compounds, which are likely to be integral components of future topological insulator optical devices.
AB - Bi2Se3 is a topological insulator with unique optical properties, including linearlydispersing surface states. Many of the proposed device applications for Bi2Se3 require a lattice-matched trivially-insulating component. It is known that (Bi1-xInx)2Se3 is a trivial band insulator for moderate indium concentrations. In this paper, we grow and characterize the optical properties of (Bi1-xInx)2Se3 films with varying indium concentrations. We find that the lattice constant and optical bandgap for (Bi1-xInx)2Se3 varies linearly with concentration. We perform infrared reflection measurements as a function of polarization and angle, enabling us to model the permittivity for these materials. Again, we find that most parameters vary linearly with concentration. Our results for the pure end members are consistent with the literature values. This is the first report of optical values for the intermediate compounds, which are likely to be integral components of future topological insulator optical devices.
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U2 - 10.1364/OME.8.002570
DO - 10.1364/OME.8.002570
M3 - Article
AN - SCOPUS:85051810810
SN - 2159-3930
VL - 8
SP - 2570
EP - 2578
JO - Optical Materials Express
JF - Optical Materials Express
IS - 9
ER -