Optical properties of molecular-beam-epitaxy-grown InGaMnAs thin films

F. C. Peiris, J. I. Hungerford, O. Maksimov, N. Samarth

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The authors have determined the dielectric functions of a series of molecular-beam-epitaxy-grown (In0.5 Ga0.5) 1-x Mnx As thin films deposited on InP substrates. Two variable angle spectroscopic ellipsometers, covering both the IR and the UV range (0.2-30 μm), were used to obtain optical spectra for each of the samples. Using a standard inversion technique, the experimental data were modeled to obtain the dielectric function for each of the quaternary samples. By using a parametric semiconductor model, they deduced the critical point parameters corresponding to the electronic transitions in the Brillouin zone. Their analysis indicates that in this particular quaternary system, while the critical point associated with the fundamental gap, E0, blueshifts as a function of Mn concentration, the E1 critical point shows a redshift with respect to the Mn concentration.

Original languageEnglish (US)
Pages (from-to)1087-1089
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number3
DOIs
StatePublished - Jun 11 2007

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Molecular beam epitaxy
critical point
molecular beam epitaxy
Optical properties
Semiconductor device models
optical properties
Thin films
thin films
ellipsometers
Brillouin zones
optical spectrum
coverings
Substrates
inversions
electronics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The authors have determined the dielectric functions of a series of molecular-beam-epitaxy-grown (In0.5 Ga0.5) 1-x Mnx As thin films deposited on InP substrates. Two variable angle spectroscopic ellipsometers, covering both the IR and the UV range (0.2-30 μm), were used to obtain optical spectra for each of the samples. Using a standard inversion technique, the experimental data were modeled to obtain the dielectric function for each of the quaternary samples. By using a parametric semiconductor model, they deduced the critical point parameters corresponding to the electronic transitions in the Brillouin zone. Their analysis indicates that in this particular quaternary system, while the critical point associated with the fundamental gap, E0, blueshifts as a function of Mn concentration, the E1 critical point shows a redshift with respect to the Mn concentration.",
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Optical properties of molecular-beam-epitaxy-grown InGaMnAs thin films. / Peiris, F. C.; Hungerford, J. I.; Maksimov, O.; Samarth, N.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 3, 11.06.2007, p. 1087-1089.

Research output: Contribution to journalArticle

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AU - Peiris, F. C.

AU - Hungerford, J. I.

AU - Maksimov, O.

AU - Samarth, N.

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AB - The authors have determined the dielectric functions of a series of molecular-beam-epitaxy-grown (In0.5 Ga0.5) 1-x Mnx As thin films deposited on InP substrates. Two variable angle spectroscopic ellipsometers, covering both the IR and the UV range (0.2-30 μm), were used to obtain optical spectra for each of the samples. Using a standard inversion technique, the experimental data were modeled to obtain the dielectric function for each of the quaternary samples. By using a parametric semiconductor model, they deduced the critical point parameters corresponding to the electronic transitions in the Brillouin zone. Their analysis indicates that in this particular quaternary system, while the critical point associated with the fundamental gap, E0, blueshifts as a function of Mn concentration, the E1 critical point shows a redshift with respect to the Mn concentration.

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