Optical properties of Si-doped GaN

E. F. Schubert, I. D. Goepfert, W. Grieshaber, J. M. Redwing

Research output: Contribution to journalArticle

186 Scopus citations

Abstract

The optical properties of n-type GaN are investigated for Si doping concentrations ranging from 5×1016 to 7×1018 cm-3. The photoluminescence linewidth of the near-band gap optical transition increases from 47 to 78 meV as the doping concentration is increased. The broadening is modeled in terms of potential fluctuations caused by the random distribution of donor impurities. Good agreement is found between experimental and theoretical results. The intensity of the near-band-gap transition increases monotonically as the doping concentration is increased indicating that nonradiative transitions dominate at a low doping density. The comparison of absorption, luminescence, reflectance, and photoreflectance measurements reveals the absence of a Stokes shift at room temperature demonstrating the intrinsic nature of the near-band edge transition.

Original languageEnglish (US)
Pages (from-to)921-923
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number7
DOIs
StatePublished - Aug 18 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Optical properties of Si-doped GaN'. Together they form a unique fingerprint.

  • Cite this

    Schubert, E. F., Goepfert, I. D., Grieshaber, W., & Redwing, J. M. (1997). Optical properties of Si-doped GaN. Applied Physics Letters, 71(7), 921-923. https://doi.org/10.1063/1.119689