Optical properties of Zn0.5Cd0.5Se thin films grown on InP by molecular beam epitaxy

O. Maksimov, W. H. Wang, Nitin Samarth, Martin Muñoz, M. C. Tamargo

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

We report photoluminescence (PL) and reflectivity measurements of Zn 0.5Cd0.5Se epilayers grown by molecular beam epitaxy on InP substrates. The low-temperature PL spectra are dominated by asymmetric lines, which can be deconvoluted into two Gaussian peaks with a separation of ∼8 meV. The behavior of these peaks is studied as a function of excitation intensity and temperature, revealing that these are free exciton (FE) and bound exciton emission lines. Two lower energy emission lines are also observed and assigned to the first and second longitudinal optical phonon replicas of the FE emission. The temperature dependence of the intensity, line width, and energy of the dominant emission lines are described by an Arrhenius plot, a Bose-Einstein type relationship, Varshni's and Bose-Einstein equations, respectively.

Original languageEnglish (US)
Pages (from-to)461-466
Number of pages6
JournalSolid State Communications
Volume128
Issue number12
DOIs
StatePublished - Dec 1 2003

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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