Optical spectroscopy of II-VI (magnetic) semiconductor quantum dots

P. A. Crowell, V. Nikitin, J. A. Gupta, D. D. Awschalom, F. Flack, N. Samarth

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We have probed the magnetooptical properties of II-VI semiconductor quantum dots at low temperatures (T = 5 K) in magnetic fields up to 6 T. A layer of coherently strained CdSe dots of diameters 5-20 nm is introduced into heterostructures containing either a Zn0.8Cd0.2Se quantum well or a barrier layer of MnSe. In the quantum well structure, carriers are localized in strain fields due to the nearby quantum dot layer. The effective g-factors g* of excitons in the localized states are ∼-1.5. In contrast, g* ∼ 6-7 for carriers localized in CdSe islands coupled to an adjacent MnSe barrier. The enhancement of the g-factor in this case is due to the overlap of the tails of the localized wave functions with Mn++ ions in the barrier.

Original languageEnglish (US)
Pages (from-to)854-857
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume2
Issue number1-4
DOIs
StatePublished - Jul 15 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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