Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000Å thick InGaN active region. Hydride vapour phase epitaxy (HVPE) is used to grow a 10μm thick GaN buffer layer on (0001) sapphire, and the GaN/In0.09Ga0.91N/GaN double heterostructure is subsequently grown by metal organic vapour phase epitaxy (MOVPE). 1 mm long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. Optical pumping at room temperature with a pulsed nitrogen laser yields an incident threshold power density of 1.3MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5meV, and the output becomes highly TE polarised.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering