Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets

D. Stocker, E. F. Schubert, K. S. Boutros, J. S. Flynn, R. P. Vaudo, V. M. Phanse, Joan Marie Redwing

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000Å thick InGaN active region. Hydride vapour phase epitaxy (HVPE) is used to grow a 10μm thick GaN buffer layer on (0001) sapphire, and the GaN/In0.09Ga0.91N/GaN double heterostructure is subsequently grown by metal organic vapour phase epitaxy (MOVPE). 1 mm long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. Optical pumping at room temperature with a pulsed nitrogen laser yields an incident threshold power density of 1.3MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5meV, and the output becomes highly TE polarised.

Original languageEnglish (US)
Pages (from-to)373-375
Number of pages3
JournalElectronics Letters
Volume34
Issue number4
DOIs
StatePublished - Feb 19 1998

Fingerprint

Vapor phase epitaxy
Sapphire
Heterojunctions
Optically pumped lasers
Optical pumping
Lasers
Buffer layers
Quantum efficiency
Hydrides
Linewidth
Nitrogen
Substrates
Metals
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Stocker, D., Schubert, E. F., Boutros, K. S., Flynn, J. S., Vaudo, R. P., Phanse, V. M., & Redwing, J. M. (1998). Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets. Electronics Letters, 34(4), 373-375. https://doi.org/10.1049/el:19980323
Stocker, D. ; Schubert, E. F. ; Boutros, K. S. ; Flynn, J. S. ; Vaudo, R. P. ; Phanse, V. M. ; Redwing, Joan Marie. / Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets. In: Electronics Letters. 1998 ; Vol. 34, No. 4. pp. 373-375.
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Stocker, D, Schubert, EF, Boutros, KS, Flynn, JS, Vaudo, RP, Phanse, VM & Redwing, JM 1998, 'Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets', Electronics Letters, vol. 34, no. 4, pp. 373-375. https://doi.org/10.1049/el:19980323

Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets. / Stocker, D.; Schubert, E. F.; Boutros, K. S.; Flynn, J. S.; Vaudo, R. P.; Phanse, V. M.; Redwing, Joan Marie.

In: Electronics Letters, Vol. 34, No. 4, 19.02.1998, p. 373-375.

Research output: Contribution to journalArticle

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Stocker D, Schubert EF, Boutros KS, Flynn JS, Vaudo RP, Phanse VM et al. Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets. Electronics Letters. 1998 Feb 19;34(4):373-375. https://doi.org/10.1049/el:19980323