Optimization of a 193-nm silylation process for sub-0.25-um lithography

Susan C. Palmateer, Roderick R. Kunz, Mark W. Horn, A. R. Forte, Mordechai Rothschild

Research output: Chapter in Book/Report/Conference proceedingConference contribution

50 Scopus citations

Abstract

We have optimized a positive-tone silylation process using polyvinylphenol resist and dimethylsilyldimethylamine as the silylating agent. Imaging quality and process latitude have been evaluated at 193 nm using a 0.5-NA SVGL prototype exposure system. A low-temperature dry etch process was developed that produces vertical resist profiles resulting in large exposure and defocus latitudes, linearity of gratings down to 0.175 μm, and resolution of 0.15-μm gratings and isolated lines.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages455-464
Number of pages10
ISBN (Print)0819417866
StatePublished - Jan 1 1995
EventAdvances in Resist Technology and Processing XII - Santa Clara, CA, USA
Duration: Feb 20 1995Feb 22 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2438
ISSN (Print)0277-786X

Other

OtherAdvances in Resist Technology and Processing XII
CitySanta Clara, CA, USA
Period2/20/952/22/95

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Palmateer, S. C., Kunz, R. R., Horn, M. W., Forte, A. R., & Rothschild, M. (1995). Optimization of a 193-nm silylation process for sub-0.25-um lithography. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 455-464). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2438). Society of Photo-Optical Instrumentation Engineers.