Optimized growth of heteroepitaxial (111) NiFe2O4 thin films on (0001) sapphire with two in-plane variants via chemical solution deposition

Safoura Seifikar, Bridget Calandro, Goran Rasic, Elisabeth Deeb, Jijin Yang, Nazanin Bassiri-Gharb, Justin Schwartz

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

(111)-oriented epitaxial thin films of nickel ferrite (NFO) are grown on c-plane sapphire [α-Al2O3(0001)] substrates using a chemical solution deposition technique. The processing conditions, including pyrolysis and annealing temperatures, are varied to achieve a film that shows maximum texture and epitaxy. It is shown that increasing the pyrolysis temperature to 400°C and decreasing the annealing temperature to 750°C for 10 min result in the highest degree of texture in the films. Lower film thickness also leads to a higher degree of texture. Microstructural studies confirm an in-plane epitaxial relationship between the (111) NFO film and the (0001) Al2O3 substrate in two variants, [110] NFO || [101̄0]Al2O3 or [11̄00]Al2O3.

Original languageEnglish (US)
Pages (from-to)3050-3053
Number of pages4
JournalJournal of the American Ceramic Society
Volume96
Issue number10
DOIs
StatePublished - Oct 1 2013

Fingerprint

Aluminum Oxide
Sapphire
Textures
Thin films
Pyrolysis
Annealing
Epitaxial films
Substrates
Epitaxial growth
Temperature
Ferrite
Film thickness
Nickel
Processing
nickel ferrite

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Seifikar, Safoura ; Calandro, Bridget ; Rasic, Goran ; Deeb, Elisabeth ; Yang, Jijin ; Bassiri-Gharb, Nazanin ; Schwartz, Justin. / Optimized growth of heteroepitaxial (111) NiFe2O4 thin films on (0001) sapphire with two in-plane variants via chemical solution deposition. In: Journal of the American Ceramic Society. 2013 ; Vol. 96, No. 10. pp. 3050-3053.
@article{a46f47a07f73422792d895882d9bea64,
title = "Optimized growth of heteroepitaxial (111) NiFe2O4 thin films on (0001) sapphire with two in-plane variants via chemical solution deposition",
abstract = "(111)-oriented epitaxial thin films of nickel ferrite (NFO) are grown on c-plane sapphire [α-Al2O3(0001)] substrates using a chemical solution deposition technique. The processing conditions, including pyrolysis and annealing temperatures, are varied to achieve a film that shows maximum texture and epitaxy. It is shown that increasing the pyrolysis temperature to 400°C and decreasing the annealing temperature to 750°C for 10 min result in the highest degree of texture in the films. Lower film thickness also leads to a higher degree of texture. Microstructural studies confirm an in-plane epitaxial relationship between the (111) NFO film and the (0001) Al2O3 substrate in two variants, [110] NFO || [101̄0]Al2O3 or [11̄00]Al2O3.",
author = "Safoura Seifikar and Bridget Calandro and Goran Rasic and Elisabeth Deeb and Jijin Yang and Nazanin Bassiri-Gharb and Justin Schwartz",
year = "2013",
month = "10",
day = "1",
doi = "10.1111/jace.12520",
language = "English (US)",
volume = "96",
pages = "3050--3053",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "10",

}

Optimized growth of heteroepitaxial (111) NiFe2O4 thin films on (0001) sapphire with two in-plane variants via chemical solution deposition. / Seifikar, Safoura; Calandro, Bridget; Rasic, Goran; Deeb, Elisabeth; Yang, Jijin; Bassiri-Gharb, Nazanin; Schwartz, Justin.

In: Journal of the American Ceramic Society, Vol. 96, No. 10, 01.10.2013, p. 3050-3053.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optimized growth of heteroepitaxial (111) NiFe2O4 thin films on (0001) sapphire with two in-plane variants via chemical solution deposition

AU - Seifikar, Safoura

AU - Calandro, Bridget

AU - Rasic, Goran

AU - Deeb, Elisabeth

AU - Yang, Jijin

AU - Bassiri-Gharb, Nazanin

AU - Schwartz, Justin

PY - 2013/10/1

Y1 - 2013/10/1

N2 - (111)-oriented epitaxial thin films of nickel ferrite (NFO) are grown on c-plane sapphire [α-Al2O3(0001)] substrates using a chemical solution deposition technique. The processing conditions, including pyrolysis and annealing temperatures, are varied to achieve a film that shows maximum texture and epitaxy. It is shown that increasing the pyrolysis temperature to 400°C and decreasing the annealing temperature to 750°C for 10 min result in the highest degree of texture in the films. Lower film thickness also leads to a higher degree of texture. Microstructural studies confirm an in-plane epitaxial relationship between the (111) NFO film and the (0001) Al2O3 substrate in two variants, [110] NFO || [101̄0]Al2O3 or [11̄00]Al2O3.

AB - (111)-oriented epitaxial thin films of nickel ferrite (NFO) are grown on c-plane sapphire [α-Al2O3(0001)] substrates using a chemical solution deposition technique. The processing conditions, including pyrolysis and annealing temperatures, are varied to achieve a film that shows maximum texture and epitaxy. It is shown that increasing the pyrolysis temperature to 400°C and decreasing the annealing temperature to 750°C for 10 min result in the highest degree of texture in the films. Lower film thickness also leads to a higher degree of texture. Microstructural studies confirm an in-plane epitaxial relationship between the (111) NFO film and the (0001) Al2O3 substrate in two variants, [110] NFO || [101̄0]Al2O3 or [11̄00]Al2O3.

UR - http://www.scopus.com/inward/record.url?scp=84885578358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885578358&partnerID=8YFLogxK

U2 - 10.1111/jace.12520

DO - 10.1111/jace.12520

M3 - Article

VL - 96

SP - 3050

EP - 3053

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 10

ER -