Optimized growth of heteroepitaxial (111) NiFe2O4 thin films on (0001) sapphire with two in-plane variants via chemical solution deposition

Safoura Seifikar, Bridget Calandro, Goran Rasic, Elisabeth Deeb, Jijin Yang, Nazanin Bassiri-Gharb, Justin Schwartz

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


(111)-oriented epitaxial thin films of nickel ferrite (NFO) are grown on c-plane sapphire [α-Al2O3(0001)] substrates using a chemical solution deposition technique. The processing conditions, including pyrolysis and annealing temperatures, are varied to achieve a film that shows maximum texture and epitaxy. It is shown that increasing the pyrolysis temperature to 400°C and decreasing the annealing temperature to 750°C for 10 min result in the highest degree of texture in the films. Lower film thickness also leads to a higher degree of texture. Microstructural studies confirm an in-plane epitaxial relationship between the (111) NFO film and the (0001) Al2O3 substrate in two variants, [110] NFO || [101̄0]Al2O3 or [11̄00]Al2O3.

Original languageEnglish (US)
Pages (from-to)3050-3053
Number of pages4
JournalJournal of the American Ceramic Society
Issue number10
StatePublished - Oct 1 2013

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry


Dive into the research topics of 'Optimized growth of heteroepitaxial (111) NiFe<sub>2</sub>O<sub>4</sub> thin films on (0001) sapphire with two in-plane variants via chemical solution deposition'. Together they form a unique fingerprint.

Cite this