Optoelectronic Properties of Heterostructures: The Most Recent Developments Based on Graphene and Transition-Metal Dichalcogenides

Nihar R. Pradhan, Saikat Talapatra, Mauricio Terrones, Pulickel M. Ajayan, Luis Balicas

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The extremely high chargecarrier mobility in graphene has motivated the exploration of unique properties in other two-dimensional (2-D) materials, such as hexagonal boron nitride (h-BN), phosphorene, silicine, and the transition-metal dichalcogenides (TMDs). The latter compounds have generated great interest due to their potential for optoelectronic applications, since their band gaps are tunable as a function of the number of layers, even as the compounds remain flexible and nearly translucent when composed of a few atomic layers.

Original languageEnglish (US)
Article number7891562
Pages (from-to)18-32
Number of pages15
JournalIEEE Nanotechnology Magazine
Volume11
Issue number2
DOIs
StatePublished - Jun 2017

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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