Ordered and Atomically Perfect Fragmentation of Layered Transition Metal Dichalcogenides via Mechanical Instabilities

Ming Chen, Juan Xia, Jiadong Zhou, Qingsheng Zeng, Kaiwei Li, Kazunori Fujisawa, Wei Fu, Ting Zhang, Jing Zhang, Zhe Wang, Zhixun Wang, Xiaoting Jia, Mauricio Terrones Maldonado, Ze Xiang Shen, Zheng Liu, Lei Wei

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Thermoplastic polymers subjected to a continuous tensile stress experience a state of mechanical instabilities, resulting in neck formation and propagation. The necking process with strong localized strain enables the transformation of initially brittle polymeric materials into robust, flexible, and oriented forms. Here we harness the polymer-based mechanical instabilities to control the fragmentation of atomically thin transition metal dichalcogenides (TMDs). We develop a simple and versatile nanofabrication tool to precisely fragment atom-thin TMDs sandwiched between thermoplastic polymers into ordered and atomically perfect TMD nanoribbons in arbitrary directions regardless of the crystal structures, defect content, and original geometries. This method works for a very broad spectrum of semiconducting TMDs with thicknesses ranging from monolayers to bulk crystals. We also explore the electrical properties of the fabricated monolayer nanoribbon arrays, obtaining an on/off ratio of â106 for such MoS2 arrays based field-effect transistors. Furthermore, we demonstrate an improved hydrogen evolution reaction with the resulting monolayer MoS2 nanoribbons, thanks to the largely increased catalytic edge sites formed by this physical fragmentation method. This capability not only enriches the fundamental study of TMD extreme and fragmentation mechanics, but also impacts on future developments of TMD-based devices.

Original languageEnglish (US)
Pages (from-to)9191-9199
Number of pages9
JournalACS nano
Volume11
Issue number9
DOIs
StatePublished - Sep 26 2017

Fingerprint

Transition metals
fragmentation
transition metals
Nanoribbons
Carbon Nanotubes
Monolayers
Polymers
Thermoplastics
polymers
harnesses
nanofabrication
Field effect transistors
tensile stress
Nanotechnology
Tensile stress
Hydrogen
Mechanics
Electric properties
field effect transistors
Crystal structure

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chen, Ming ; Xia, Juan ; Zhou, Jiadong ; Zeng, Qingsheng ; Li, Kaiwei ; Fujisawa, Kazunori ; Fu, Wei ; Zhang, Ting ; Zhang, Jing ; Wang, Zhe ; Wang, Zhixun ; Jia, Xiaoting ; Terrones Maldonado, Mauricio ; Shen, Ze Xiang ; Liu, Zheng ; Wei, Lei. / Ordered and Atomically Perfect Fragmentation of Layered Transition Metal Dichalcogenides via Mechanical Instabilities. In: ACS nano. 2017 ; Vol. 11, No. 9. pp. 9191-9199.
@article{23d20af0f5ed466b991d1a7ccef7a1a8,
title = "Ordered and Atomically Perfect Fragmentation of Layered Transition Metal Dichalcogenides via Mechanical Instabilities",
abstract = "Thermoplastic polymers subjected to a continuous tensile stress experience a state of mechanical instabilities, resulting in neck formation and propagation. The necking process with strong localized strain enables the transformation of initially brittle polymeric materials into robust, flexible, and oriented forms. Here we harness the polymer-based mechanical instabilities to control the fragmentation of atomically thin transition metal dichalcogenides (TMDs). We develop a simple and versatile nanofabrication tool to precisely fragment atom-thin TMDs sandwiched between thermoplastic polymers into ordered and atomically perfect TMD nanoribbons in arbitrary directions regardless of the crystal structures, defect content, and original geometries. This method works for a very broad spectrum of semiconducting TMDs with thicknesses ranging from monolayers to bulk crystals. We also explore the electrical properties of the fabricated monolayer nanoribbon arrays, obtaining an on/off ratio of {\^a}106 for such MoS2 arrays based field-effect transistors. Furthermore, we demonstrate an improved hydrogen evolution reaction with the resulting monolayer MoS2 nanoribbons, thanks to the largely increased catalytic edge sites formed by this physical fragmentation method. This capability not only enriches the fundamental study of TMD extreme and fragmentation mechanics, but also impacts on future developments of TMD-based devices.",
author = "Ming Chen and Juan Xia and Jiadong Zhou and Qingsheng Zeng and Kaiwei Li and Kazunori Fujisawa and Wei Fu and Ting Zhang and Jing Zhang and Zhe Wang and Zhixun Wang and Xiaoting Jia and {Terrones Maldonado}, Mauricio and Shen, {Ze Xiang} and Zheng Liu and Lei Wei",
year = "2017",
month = "9",
day = "26",
doi = "10.1021/acsnano.7b04158",
language = "English (US)",
volume = "11",
pages = "9191--9199",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "9",

}

Chen, M, Xia, J, Zhou, J, Zeng, Q, Li, K, Fujisawa, K, Fu, W, Zhang, T, Zhang, J, Wang, Z, Wang, Z, Jia, X, Terrones Maldonado, M, Shen, ZX, Liu, Z & Wei, L 2017, 'Ordered and Atomically Perfect Fragmentation of Layered Transition Metal Dichalcogenides via Mechanical Instabilities', ACS nano, vol. 11, no. 9, pp. 9191-9199. https://doi.org/10.1021/acsnano.7b04158

Ordered and Atomically Perfect Fragmentation of Layered Transition Metal Dichalcogenides via Mechanical Instabilities. / Chen, Ming; Xia, Juan; Zhou, Jiadong; Zeng, Qingsheng; Li, Kaiwei; Fujisawa, Kazunori; Fu, Wei; Zhang, Ting; Zhang, Jing; Wang, Zhe; Wang, Zhixun; Jia, Xiaoting; Terrones Maldonado, Mauricio; Shen, Ze Xiang; Liu, Zheng; Wei, Lei.

In: ACS nano, Vol. 11, No. 9, 26.09.2017, p. 9191-9199.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ordered and Atomically Perfect Fragmentation of Layered Transition Metal Dichalcogenides via Mechanical Instabilities

AU - Chen, Ming

AU - Xia, Juan

AU - Zhou, Jiadong

AU - Zeng, Qingsheng

AU - Li, Kaiwei

AU - Fujisawa, Kazunori

AU - Fu, Wei

AU - Zhang, Ting

AU - Zhang, Jing

AU - Wang, Zhe

AU - Wang, Zhixun

AU - Jia, Xiaoting

AU - Terrones Maldonado, Mauricio

AU - Shen, Ze Xiang

AU - Liu, Zheng

AU - Wei, Lei

PY - 2017/9/26

Y1 - 2017/9/26

N2 - Thermoplastic polymers subjected to a continuous tensile stress experience a state of mechanical instabilities, resulting in neck formation and propagation. The necking process with strong localized strain enables the transformation of initially brittle polymeric materials into robust, flexible, and oriented forms. Here we harness the polymer-based mechanical instabilities to control the fragmentation of atomically thin transition metal dichalcogenides (TMDs). We develop a simple and versatile nanofabrication tool to precisely fragment atom-thin TMDs sandwiched between thermoplastic polymers into ordered and atomically perfect TMD nanoribbons in arbitrary directions regardless of the crystal structures, defect content, and original geometries. This method works for a very broad spectrum of semiconducting TMDs with thicknesses ranging from monolayers to bulk crystals. We also explore the electrical properties of the fabricated monolayer nanoribbon arrays, obtaining an on/off ratio of â106 for such MoS2 arrays based field-effect transistors. Furthermore, we demonstrate an improved hydrogen evolution reaction with the resulting monolayer MoS2 nanoribbons, thanks to the largely increased catalytic edge sites formed by this physical fragmentation method. This capability not only enriches the fundamental study of TMD extreme and fragmentation mechanics, but also impacts on future developments of TMD-based devices.

AB - Thermoplastic polymers subjected to a continuous tensile stress experience a state of mechanical instabilities, resulting in neck formation and propagation. The necking process with strong localized strain enables the transformation of initially brittle polymeric materials into robust, flexible, and oriented forms. Here we harness the polymer-based mechanical instabilities to control the fragmentation of atomically thin transition metal dichalcogenides (TMDs). We develop a simple and versatile nanofabrication tool to precisely fragment atom-thin TMDs sandwiched between thermoplastic polymers into ordered and atomically perfect TMD nanoribbons in arbitrary directions regardless of the crystal structures, defect content, and original geometries. This method works for a very broad spectrum of semiconducting TMDs with thicknesses ranging from monolayers to bulk crystals. We also explore the electrical properties of the fabricated monolayer nanoribbon arrays, obtaining an on/off ratio of â106 for such MoS2 arrays based field-effect transistors. Furthermore, we demonstrate an improved hydrogen evolution reaction with the resulting monolayer MoS2 nanoribbons, thanks to the largely increased catalytic edge sites formed by this physical fragmentation method. This capability not only enriches the fundamental study of TMD extreme and fragmentation mechanics, but also impacts on future developments of TMD-based devices.

UR - http://www.scopus.com/inward/record.url?scp=85029952261&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029952261&partnerID=8YFLogxK

U2 - 10.1021/acsnano.7b04158

DO - 10.1021/acsnano.7b04158

M3 - Article

C2 - 28809534

AN - SCOPUS:85029952261

VL - 11

SP - 9191

EP - 9199

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 9

ER -