Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V·s

Marcia M. Payne, Sean R. Parkin, John E. Anthony, Chung Chen Kuo, Thomas N. Jackson

Research output: Contribution to journalArticle

683 Citations (Scopus)

Abstract

We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V·s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V·s.

Original languageEnglish (US)
Pages (from-to)4986-4987
Number of pages2
JournalJournal of the American Chemical Society
Volume127
Issue number14
DOIs
StatePublished - Apr 13 2005

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Organic field effect transistors
Hole mobility
Equipment and Supplies
anthradithiophene
pentacene

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Payne, Marcia M. ; Parkin, Sean R. ; Anthony, John E. ; Kuo, Chung Chen ; Jackson, Thomas N. / Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V·s. In: Journal of the American Chemical Society. 2005 ; Vol. 127, No. 14. pp. 4986-4987.
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Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V·s. / Payne, Marcia M.; Parkin, Sean R.; Anthony, John E.; Kuo, Chung Chen; Jackson, Thomas N.

In: Journal of the American Chemical Society, Vol. 127, No. 14, 13.04.2005, p. 4986-4987.

Research output: Contribution to journalArticle

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