Organic-Inorganic Heterointerfaces for Ultrasensitive Detection of Ultraviolet Light

Dali Shao, Jian Gao, Philippe Chow, Hongtao Sun, Guoqing Xin, Prachi Sharma, Jie Lian, Nikhil A. Koratkar, Shayla Sawyer

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

The performance of graphene field-effect transistors is limited by the drastically reduced carrier mobility of graphene on silicon dioxide (SiO2) substrates. Here we demonstrate an ultrasensitive ultraviolet (UV) phototransistor featuring an organic self-assembled monolayer (SAM) sandwiched between an inorganic ZnO quantum dots decorated graphene channel and a conventional SiO2/Si substrate. Remarkably, the room-temperature mobility of the chemical-vapor-deposition grown graphene channel on the SAM is an order-of-magnitude higher than on SiO2, thereby drastically reducing electron transit-time in the channel. The resulting recirculation of electrons (in the graphene channel) within the lifetime of the photogenerated holes (in the ZnO) increases the photoresponsivity and gain of the transistor to ∼108 A/W and ∼3 × 109, respectively with a UV to visible rejection ratio of ∼103. Our UV photodetector device manufacturing is also compatible with current semiconductor processing, and suitable for large volume production. (Figure Presented).

Original languageEnglish (US)
Pages (from-to)3787-3792
Number of pages6
JournalNano letters
Volume15
Issue number6
DOIs
StatePublished - Jun 10 2015

Fingerprint

Graphite
ultraviolet radiation
Graphene
graphene
Self assembled monolayers
Phototransistors
phototransistors
Electrons
Carrier mobility
transit time
Substrates
Field effect transistors
Photodetectors
carrier mobility
Silicon Dioxide
rejection
Semiconductor quantum dots
photometers
Chemical vapor deposition
Transistors

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Shao, Dali ; Gao, Jian ; Chow, Philippe ; Sun, Hongtao ; Xin, Guoqing ; Sharma, Prachi ; Lian, Jie ; Koratkar, Nikhil A. ; Sawyer, Shayla. / Organic-Inorganic Heterointerfaces for Ultrasensitive Detection of Ultraviolet Light. In: Nano letters. 2015 ; Vol. 15, No. 6. pp. 3787-3792.
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Shao, D, Gao, J, Chow, P, Sun, H, Xin, G, Sharma, P, Lian, J, Koratkar, NA & Sawyer, S 2015, 'Organic-Inorganic Heterointerfaces for Ultrasensitive Detection of Ultraviolet Light', Nano letters, vol. 15, no. 6, pp. 3787-3792. https://doi.org/10.1021/acs.nanolett.5b00380

Organic-Inorganic Heterointerfaces for Ultrasensitive Detection of Ultraviolet Light. / Shao, Dali; Gao, Jian; Chow, Philippe; Sun, Hongtao; Xin, Guoqing; Sharma, Prachi; Lian, Jie; Koratkar, Nikhil A.; Sawyer, Shayla.

In: Nano letters, Vol. 15, No. 6, 10.06.2015, p. 3787-3792.

Research output: Contribution to journalArticle

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AU - Shao, Dali

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AU - Chow, Philippe

AU - Sun, Hongtao

AU - Xin, Guoqing

AU - Sharma, Prachi

AU - Lian, Jie

AU - Koratkar, Nikhil A.

AU - Sawyer, Shayla

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N2 - The performance of graphene field-effect transistors is limited by the drastically reduced carrier mobility of graphene on silicon dioxide (SiO2) substrates. Here we demonstrate an ultrasensitive ultraviolet (UV) phototransistor featuring an organic self-assembled monolayer (SAM) sandwiched between an inorganic ZnO quantum dots decorated graphene channel and a conventional SiO2/Si substrate. Remarkably, the room-temperature mobility of the chemical-vapor-deposition grown graphene channel on the SAM is an order-of-magnitude higher than on SiO2, thereby drastically reducing electron transit-time in the channel. The resulting recirculation of electrons (in the graphene channel) within the lifetime of the photogenerated holes (in the ZnO) increases the photoresponsivity and gain of the transistor to ∼108 A/W and ∼3 × 109, respectively with a UV to visible rejection ratio of ∼103. Our UV photodetector device manufacturing is also compatible with current semiconductor processing, and suitable for large volume production. (Figure Presented).

AB - The performance of graphene field-effect transistors is limited by the drastically reduced carrier mobility of graphene on silicon dioxide (SiO2) substrates. Here we demonstrate an ultrasensitive ultraviolet (UV) phototransistor featuring an organic self-assembled monolayer (SAM) sandwiched between an inorganic ZnO quantum dots decorated graphene channel and a conventional SiO2/Si substrate. Remarkably, the room-temperature mobility of the chemical-vapor-deposition grown graphene channel on the SAM is an order-of-magnitude higher than on SiO2, thereby drastically reducing electron transit-time in the channel. The resulting recirculation of electrons (in the graphene channel) within the lifetime of the photogenerated holes (in the ZnO) increases the photoresponsivity and gain of the transistor to ∼108 A/W and ∼3 × 109, respectively with a UV to visible rejection ratio of ∼103. Our UV photodetector device manufacturing is also compatible with current semiconductor processing, and suitable for large volume production. (Figure Presented).

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