We present the first characterization of single-crystal devices of a new solution processable material that we have previously demonstrated achieves technologically relevant performance in the polycrystalline thin film state. Our studies include growth and investigation of structural, as well as electronic properties of single crystals of 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). Field-effect transistors fabricated on the surface of diF-TESADT single crystals exhibit excellent electronic properties: mobility as high as 6 cm2/Vs, large current on/off ratios (I on/Ioff = 1 × 108), small subthreshold slopes (S = 1 V/dec), and extremely small hysteresis in the current-voltage characteristics. These properties, coupled with solution processability, make diF-TESADT attractive for electronic applications and demonstrate the technological potential of soluble oligomers.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Chemistry