Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric

Lijuan Zhen, Weihua Guan, Liwei Shang, Ming Liu, Ge Liu

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

An all-organic memory device based on a copper phthalocyanine (CuPc) thin-film transistor (TFT) using gold nanocrystals embedded in a polyimide gate dielectric is demonstrated. Both the gate dielectric and the active semiconductor layer are organic materials. Discrete gold nanocrystals are adopted as the charge storage medium. Under proper gate bias, gold nanocrystals are charged and discharged, resulting in the modulation of the channel conductance. Current-voltage (I-V) measurements at room temperature show the memory behaviour of the fabricated devices. The detailed programming and erasing operations are discussed. Low fabrication temperature and low cost are two benefits of the fabricated memory devices, which could provide a low-cost solution for the all organic circuits.

Original languageEnglish (US)
Article number135111
JournalJournal of Physics D: Applied Physics
Volume41
Issue number13
DOIs
StatePublished - Jul 7 2008

Fingerprint

Gate dielectrics
Thin film transistors
polyimides
Polyimides
Gold
Nanocrystals
nanocrystals
transistors
gold
Data storage equipment
thin films
organic materials
programming
Costs
Modulation
Semiconductor materials
costs
Copper
modulation
Fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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abstract = "An all-organic memory device based on a copper phthalocyanine (CuPc) thin-film transistor (TFT) using gold nanocrystals embedded in a polyimide gate dielectric is demonstrated. Both the gate dielectric and the active semiconductor layer are organic materials. Discrete gold nanocrystals are adopted as the charge storage medium. Under proper gate bias, gold nanocrystals are charged and discharged, resulting in the modulation of the channel conductance. Current-voltage (I-V) measurements at room temperature show the memory behaviour of the fabricated devices. The detailed programming and erasing operations are discussed. Low fabrication temperature and low cost are two benefits of the fabricated memory devices, which could provide a low-cost solution for the all organic circuits.",
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Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. / Zhen, Lijuan; Guan, Weihua; Shang, Liwei; Liu, Ming; Liu, Ge.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 13, 135111, 07.07.2008.

Research output: Contribution to journalArticle

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AU - Zhen, Lijuan

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