An all-organic memory device based on a copper phthalocyanine (CuPc) thin-film transistor (TFT) using gold nanocrystals embedded in a polyimide gate dielectric is demonstrated. Both the gate dielectric and the active semiconductor layer are organic materials. Discrete gold nanocrystals are adopted as the charge storage medium. Under proper gate bias, gold nanocrystals are charged and discharged, resulting in the modulation of the channel conductance. Current-voltage (I-V) measurements at room temperature show the memory behaviour of the fabricated devices. The detailed programming and erasing operations are discussed. Low fabrication temperature and low cost are two benefits of the fabricated memory devices, which could provide a low-cost solution for the all organic circuits.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films