Organic thin film transistors with field effect mobility >2 cm2/V-s

D. J. Gundlach, C. C. Kuo, S. F. Nelson, Thomas Nelson Jackson

Research output: Contribution to conferencePaper

71 Citations (Scopus)

Abstract

Pentacene-based organic thin film transistors (OTFT) with field effect mobility as large as 2.1 cm2/V-s are reported. Using silane coupling agents to reduce the surface energy of the SiO2 gate dielectric used in bottom gate pentacene OTFTs significantly improves device performance. The device was fabricated on a single crystal silicon substrate with the substrate serving as the gate electrode and 250 nm thick thermal SiO2 layer grown for use as the OTFT gate dielectric.

Original languageEnglish (US)
Pages164-165
Number of pages2
StatePublished - Dec 1 1999
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: Jun 28 1999Jun 30 1999

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period6/28/996/30/99

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Gate dielectrics
Thin film transistors
Coupling agents
Substrates
Silanes
Interfacial energy
Single crystals
Silicon
Electrodes
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Gundlach, D. J., Kuo, C. C., Nelson, S. F., & Jackson, T. N. (1999). Organic thin film transistors with field effect mobility >2 cm2/V-s. 164-165. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .
Gundlach, D. J. ; Kuo, C. C. ; Nelson, S. F. ; Jackson, Thomas Nelson. / Organic thin film transistors with field effect mobility >2 cm2/V-s. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .2 p.
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abstract = "Pentacene-based organic thin film transistors (OTFT) with field effect mobility as large as 2.1 cm2/V-s are reported. Using silane coupling agents to reduce the surface energy of the SiO2 gate dielectric used in bottom gate pentacene OTFTs significantly improves device performance. The device was fabricated on a single crystal silicon substrate with the substrate serving as the gate electrode and 250 nm thick thermal SiO2 layer grown for use as the OTFT gate dielectric.",
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Gundlach, DJ, Kuo, CC, Nelson, SF & Jackson, TN 1999, 'Organic thin film transistors with field effect mobility >2 cm2/V-s', Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, 6/28/99 - 6/30/99 pp. 164-165.

Organic thin film transistors with field effect mobility >2 cm2/V-s. / Gundlach, D. J.; Kuo, C. C.; Nelson, S. F.; Jackson, Thomas Nelson.

1999. 164-165 Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .

Research output: Contribution to conferencePaper

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Gundlach DJ, Kuo CC, Nelson SF, Jackson TN. Organic thin film transistors with field effect mobility >2 cm2/V-s. 1999. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .