Orientation control of knbo3 thin films deposited by laser ablation on mgo (100) using srtio, transition layers

Venkatraman Gopalan, Huyang Xie, Wei Yung Hsu, Rishi Raj

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Epitaxial thin films of KNbO3 were deposited on MgO (100) single crystal substrates using pulsed laser ablation, with a SrTiO3 transition layer in between. Their stoichiometry was controlled by repeated cycles of alternate pulsing of KNbO3 and KNO3 targets. The SrTiO3 transition layers were used to control the orientation of the KNbO3 film. Using two different deposition temperatures, SrTiO3 films were grown with two different growth planes, namely, (110) and (100). For (100) oriented SrTiO3 films, the orientation relationship between various layers was (110) or (001) KNbO3 // (100) SrTiO3 // (100) MgO. For (110) oriented SrTiO3 films, the orientation relationships were (020) or (200) KNbO3 // (110) SrTiO3 // (100) MgO. Measurement of the capacitance of the KNbO3 films during heating revealed a transition from the orthoihombic to tetragonal phase near 235±2 °C and tetragonal to cubic phase near 430±2 °C.

Original languageEnglish (US)
Pages (from-to)55-60
Number of pages6
JournalFerroelectrics
Volume152
Issue number1
DOIs
StatePublished - Feb 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Orientation control of knbo3 thin films deposited by laser ablation on mgo (100) using srtio, transition layers'. Together they form a unique fingerprint.

  • Cite this