Orientation dependence of nickel silicide formation in contacts to silicon nanowires

N. S. Dellas, B. Z. Liu, S. M. Eichfeld, C. M. Eichfeld, T. S. Mayer, S. E. Mohney

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

The orientation dependence of Ni silicide phase formation in the silicidation of silicon nanowires (SiNWs) by Ni has been studied. SiNWs with a [112] growth direction contacted by Ni pads form θ -Ni2 Si for annealing conditions from 350 to 700 °C for 2 min. The θ -Ni2 Si has an epitaxial orientation of θ -Ni2 Si [001] Si [11 1-] and θ -Ni2 Si (100) Si (112) with the SiNW. On the other hand, SiNWs with a [111] growth direction react with Ni pads to form NiSi2 with an epitaxial orientation of NiSi2 [1 1- 0] Si [1 1- 0] and NiSi2 (111) Si (111) after annealing at 450 °C for 2 min. The [111] SiNWs were also silicided at 700 °C for 2 min, forming the low-resistivity NiSi phase. The epitaxial phases identified in the reactions of Ni films with SiNWs suggest that lattice matching at both the silicide/Si growth front and the surface of the original SiNW may play a significant role in determining the first silicide segment to grow.

Original languageEnglish (US)
Article number094309
JournalJournal of Applied Physics
Volume105
Issue number9
DOIs
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Orientation dependence of nickel silicide formation in contacts to silicon nanowires'. Together they form a unique fingerprint.

Cite this