Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire

Xuegang Chen, Benjamin Huet, Tanushree H. Choudhury, Joan Marie Redwing, Toh Ming Lu, Gwo Ching Wang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Monolayer WSe2, a 2D transition metal dichalcogenide (TMDCs), has been demonstrated as a good candidate for potential applications in optoelectronics. It is imperative to know the crystalline quality of WSe2 over the wafer scale prior to its applications. Azimuthal reflection high-energy electron diffraction (ARHEED) is demonstrated to be a powerful technique to measure the symmetry, lattice constants, and in-plane orientation domain dispersion in wafer-scale, continuous monolayer WSe2 epitaxially grown by metal organic chemical vapor deposition on c-plane sapphire substrate. The constructed 2D reciprocal map from ARHEED reveals few degrees’ dispersion in WSe2 orientation domains due to the step meandering/bunching/mosaic of sapphire substrate. Minor 30° orientation domains are also observed. The methodology can be applied to study other TMDCs epitaxial monolayers, graphene, and confined atomically thin hetero-epitaxial metals.

Original languageEnglish (US)
Article number150798
JournalApplied Surface Science
Volume567
DOIs
StatePublished - Nov 30 2021

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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