TY - JOUR
T1 - Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire
AU - Chen, Xuegang
AU - Huet, Benjamin
AU - Choudhury, Tanushree H.
AU - Redwing, Joan Marie
AU - Lu, Toh Ming
AU - Wang, Gwo Ching
N1 - Funding Information:
This work is supported by the New York State’s Empire State Development’s Division of Science, Technology and Innovation (NYSTAR) through Focus Center Contract C150117, Rensselaer, and the Penn State 2D Crystal Consortium - Materials Innovation Platform under National Science Foundation cooperative agreement DMR-1539916.
Publisher Copyright:
© 2021
PY - 2021/11/30
Y1 - 2021/11/30
N2 - Monolayer WSe2, a 2D transition metal dichalcogenide (TMDCs), has been demonstrated as a good candidate for potential applications in optoelectronics. It is imperative to know the crystalline quality of WSe2 over the wafer scale prior to its applications. Azimuthal reflection high-energy electron diffraction (ARHEED) is demonstrated to be a powerful technique to measure the symmetry, lattice constants, and in-plane orientation domain dispersion in wafer-scale, continuous monolayer WSe2 epitaxially grown by metal organic chemical vapor deposition on c-plane sapphire substrate. The constructed 2D reciprocal map from ARHEED reveals few degrees’ dispersion in WSe2 orientation domains due to the step meandering/bunching/mosaic of sapphire substrate. Minor 30° orientation domains are also observed. The methodology can be applied to study other TMDCs epitaxial monolayers, graphene, and confined atomically thin hetero-epitaxial metals.
AB - Monolayer WSe2, a 2D transition metal dichalcogenide (TMDCs), has been demonstrated as a good candidate for potential applications in optoelectronics. It is imperative to know the crystalline quality of WSe2 over the wafer scale prior to its applications. Azimuthal reflection high-energy electron diffraction (ARHEED) is demonstrated to be a powerful technique to measure the symmetry, lattice constants, and in-plane orientation domain dispersion in wafer-scale, continuous monolayer WSe2 epitaxially grown by metal organic chemical vapor deposition on c-plane sapphire substrate. The constructed 2D reciprocal map from ARHEED reveals few degrees’ dispersion in WSe2 orientation domains due to the step meandering/bunching/mosaic of sapphire substrate. Minor 30° orientation domains are also observed. The methodology can be applied to study other TMDCs epitaxial monolayers, graphene, and confined atomically thin hetero-epitaxial metals.
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U2 - 10.1016/j.apsusc.2021.150798
DO - 10.1016/j.apsusc.2021.150798
M3 - Article
AN - SCOPUS:85112014208
VL - 567
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
M1 - 150798
ER -